Low-dimensional ZnO, possessing well-defined side facets
and optical
gain properties, has emerged as a promising material to develop ultraviolet
coherent light sources. However, the realization of electrically driven
ZnO homojunction luminescence and laser devices is still a challenge
due to the absence of a reliable p-type ZnO. Herein, the sample of
p-type ZnO microwires doped by Sb (ZnO:Sb MWs) was synthesized individually.
Subsequently, the p-type conductivity was examined using a single-MW
field-effect transistor. Upon optical pumping, a ZnO:Sb MW showing
a regular hexagonal cross-section and smooth sidewall facets can feature
as an optical microcavity, which is evidenced by the achievement of
whispering-gallery-mode lasing. By combining an n-type ZnO layer,
a single ZnO:Sb MW homojunction light-emitting diode (LED), which
exhibited a typical ultraviolet emission at a wavelength of 379.0
nm and a line-width of approximately 23.5 nm, was constructed. We
further illustrated that strong exciton-photon coupling can occur
in the as-constructed p-ZnO:Sb MW/n-ZnO homojunction LED by researching
spatially resolved electroluminescence spectra, contributing to the
exciton-polariton effect. Particularly, varying the cross-sectional
dimensions of ZnO:Sb wires can further modulate the exciton-photon
coupling strengths. We anticipate that the results can provide an
effective exemplification to realize reliable p-type ZnO and tremendously
promote the development of low-dimensional ZnO homojunction optoelectronic
devices.