Determination of deformation potentials in ZnSe/GaAs strained-layer heterostructures

Cathodoluminescence spectra of tensile strained ZnSe/ MBE single quantum wells

“…We compare our values for the parameters a and b with different data from other authors and discuss systematic errors. Whereas our value for the parameter a = 5.3 ± 0.4 eV well reproduces the values of [1] and [2], the parameter b = −1.0 ± 0.1 eV nearly coincides with [4], [6] and [7] (for low pressure). We discuss the ratio a/b (determined from α/β) because this is (in our measurements) the most reliable value.…”

“…In figure 9 the lighthole exciton energy is plotted as a function of the heavyhole energy. The data points were taken from different papers [2,[4][5][6][7]19] at p = 1 bar and T ≈ 10 K. The ZnSe layers are biaxially (tensile and compressive respectively) strained by GaAs. From our results we expect a linear dependence with the slope E lh / E hh = 3.0 (broken line: fitted to the bulk value 2804 eV).…”

“…Comparing these different data, the experimental values vary for the parameter a between −4.8 eV and −5.4 eV and for the parameter b between −0.74 eV and −1.27 eV (in [6] up to −3 eV). Furthermore, we only found data for † E-mail address: mitdank@metronet.de the experimental error in [2] for the hydrostatic deformation potential a (and the trigonal deformation potential d = −3.9 ± 0.2 eV which is not discussed in this paper) and in [7] for the shear (tetragonal) deformation potential. Therefore, we believe it would be useful work to reconsider the information concerning the deformation potentials a and b.…”

“…Here, the deformation potentials were determined as a = −5.4 eV and b = −1.2 eV by investigating reflection spectra of ZnSe bulk material in dependence on uniaxial compressive pressure. The authors of [2] investigated ZnSe layers on GaAs substrates. They found the value a = −5.1±0.5 eV by using reflectance spectroscopy under uniaxial stress.…”