Determination of deep ultrathin equivalent oxide thickness (EOT) from measuring flat-band C-V curve

Chen, Chang-Hsiao; Fang, Yean–Kuen; Yang, Ching Fen; Ting, Shyh-Fann; Tsair, Yong-Shiuan; Wang, M.F.; Yao, L.G.; Chen, S.C.; Yu, C.H.; Meng, Lei

doi:10.1109/16.992882

Cited by 28 publications

(12 citation statements)

References 9 publications

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“…The gate oxide thickness (t 0 x) has been measured using L2W 16S544 Stokes ellipsometer from Gaertner Scientific Corporation and also calculated from the value of accumulation capacitance using a technique recently suggested for ultrathin oxides [16]. Both values are found to be closely matching (within 0.1-0.3 nm) for all the samples.…”

Section: Resultsmentioning

confidence: 97%

Improvement in the Interfacial Properties and Electrical Characteristics of Ultrathin SiO₂by Selective AC Anodisation

Kailath

DasGupta

2006

IETE Journal of Research

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In this paper we have studied the effect of selective anodisatio~ un~er ~c bias on ult~ath~n (2-2.75 nm) silicon dioxide grown at 800°C. It is shown ~hat ac anod1sat1on IS ~ore effe~tlv~ m improving the electrical properties of the ultrathin ox1de c?mpared to s~lect1ve ~nod1sat1on carried out under de condition. Unlike de anodisation, which only repairs the pmhole~ but does not improve the interfacial properties, ac anodisation is found to reduc~ the dens1ty of interface states. The efficacy of ac anodisation is found to depend on the ac s1gnal frequency and best results have been obtained at a frequency of 5 kHz.

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Section: Resultsmentioning

confidence: 97%

Improvement in the Interfacial Properties and Electrical Characteristics of Ultrathin SiO₂by Selective AC Anodisation

Kailath

DasGupta

2006

IETE Journal of Research

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“…The gate oxide thickness has been calculated from the accumulation capacitance by a method proposed for ultrathin oxide [5]. C-V characteristics of MOS capacitors on n/n + substrate, before and after anodic oxidation at 100 kHz, are shown in Fig.…”

Section: Resultsmentioning

confidence: 99%

“…For example, GaN-based photodetectors are already commercially available [3]. ZnSe is another wide direct bandgap material that is sensitive in the blue/UV region [4], [5]. Although various ZnSe-based blue/UV photodetectors were already been demonstrated, these ZnSe-based photodetectors were all grown on top of the closely lattice matched GaAs substrates.…”

Section: Index Terms-homoepitaxy Ito Metal-semiconductor-metal (Msmmentioning

confidence: 99%

A model to study the effect of selective anodic oxidation on ultrathin gate oxides

Marathe

Paily

DasGupta

et al. 2005

IEEE Trans. Electron Devices

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In this paper, we have studied the effect of selective anodic oxidation on ultrathin (22-31 A) silicon dioxide grown at different temperatures ranging from 600 C to 875 C, on both p-and n-type substrate. A model based on the concept of filling of pinholes by selective anodic oxidation is presented to quantitatively explain the reduction in the gate leakage current of the MOS capacitors after selective anodic oxidation.

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“…Both oxide thickness and accumulation charge thickness are included for strong accumulation state. Therefore, Chain et al [45] have proposed a novel and simple method to determine ultrathin oxide thickness, based on the measuring of MOS flat-band capacitance. At flat-band condition, the surface band bending and the semiconductor charge are both small and can be neglected.…”

Section: Computation Of Flat-band and Power Dissipationmentioning

confidence: 99%

“…This is due to ignoring any charge variation in the semiconductor, as in double-gate MOSFET this is intrinsic or lightly doped [47]. So we derive the exact flat-band capacitance (C FB ) and find out the flat-band voltage (V FB ), by the use of flat-band capacitance method.…”

Section: Computation Of Flat-band and Power Dissipationmentioning

confidence: 99%

Analysis of double-gate CMOS for double-pole four-throw RF switch design at 45-nm technology

2011

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In this paper, we have analyzed a 45-nm RF CMOS switch design technology with the double-pole fourthrow circuit by using independently controlled double-gate MOSFET. The proposed switch reduces the number of transistors and increases the logic density per unit area as compare to the conventional CMOS switch. With the unique independent double-gate properties, we have demonstrated the potential advantages in terms of the drain current, threshold voltage, attenuation with ON resistance, flat-band capacitances, charge density and power dissipation of the proposed switch, which provides a switch with a significant drive circuit that is free from the signal propagation delay and additional voltage power supply. Moreover, the main emphasis is to provide a plurality of such switches arranged in a densely configured switch array, which provides a lesser attenuation, and better isolation with fast switching speed.

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Determination of deep ultrathin equivalent oxide thickness (EOT) from measuring flat-band C-V curve

Cited by 28 publications

References 9 publications

Improvement in the Interfacial Properties and Electrical Characteristics of Ultrathin SiO₂by Selective AC Anodisation

Improvement in the Interfacial Properties and Electrical Characteristics of Ultrathin SiO₂by Selective AC Anodisation

A model to study the effect of selective anodic oxidation on ultrathin gate oxides

Analysis of double-gate CMOS for double-pole four-throw RF switch design at 45-nm technology

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Determination of deep ultrathin equivalent oxide thickness (EOT) from measuring flat-band C-V curve

Cited by 28 publications

References 9 publications

Improvement in the Interfacial Properties and Electrical Characteristics of Ultrathin SiO2by Selective AC Anodisation

Improvement in the Interfacial Properties and Electrical Characteristics of Ultrathin SiO2by Selective AC Anodisation

A model to study the effect of selective anodic oxidation on ultrathin gate oxides

Analysis of double-gate CMOS for double-pole four-throw RF switch design at 45-nm technology

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Product

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Improvement in the Interfacial Properties and Electrical Characteristics of Ultrathin SiO₂by Selective AC Anodisation

Improvement in the Interfacial Properties and Electrical Characteristics of Ultrathin SiO₂by Selective AC Anodisation