Determination of carrier lifetime in thermally evaporated In2S3 thin films by light induced transient grating technique

Abstract

In 2 S 3 thin films were deposited onto soda lime glass substrates using thermal evaporation technique at a constant substrate temperature of 300 °C and the films were annealed in a sulfur ambient at 250 °C and 300 °C for 1 h. Light induced transient grating (LITG) technique was used to determine the carrier lifetime in In 2 S 3 thin films. The determined carrier lifetime values for different excitation energy densities, I 0 = 0.06-1.64 mJ/cm 2 decreased from 206 to 18 ps and 150 to 14 ps for the films annealed at 250 °C and 300 °C respectively. Further, the bimolecular, Auger recombination coefficients and diffusion coefficient were determined in the films. The observed bimolecular carrier recombination origin was explained by interface and Auger recombination processes.