Determination of carrier densities in lightly doped silicon crystals from the Hall effect

Hackmann, Andreas; Neubert, D.; Scherz, Udo; Schlief, Reinhard

doi:10.1103/physrevb.24.4666

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1983

1984

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Cited by 10 publications

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Impurity Parameters of Undoped and Zn-Doped p-Type GaP with Two Acceptor Levels Determined by Hall Measurements

Siegel

Ziegler

Kühnel

1983

Phys. Stat. Sol. (a)

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Hall measurements are performed in the temperature region 60 to 900 K on undoped and Zn‐doped p‐type GaP crystals grown by the SSD method. The p(T)‐curves of undoped samples show a small step caused by the presence of a medium deep acceptor with an activation energy (0.18 ± 0.02) eV beside the shallow acceptor carbon. Carbon is present in a low concentration in the Zn‐doped samples, too. The parameters (activation energy, concentrations) of the two acceptors in both types of samples are determined by an equation cubic in p.

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