1980
DOI: 10.1007/bf02533786
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Determination of carbon impurities in epitaxial layers from semiconductor silicon by means of charged particles

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1981
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Cited by 5 publications
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“…Among various CPAA techniques, carbon analysis by Deuteron Activation Analysis (DAA) is extremely sensitive because, already with 2 MeV deuterons, the nuclear reaction C-12(d,n)N-13 (threshold: 0.3 MeV) has a high activation cross-section of nearly 170 mb, permitting its determination in high purity materials [6][7] at parts-per-billion (ppb) level.…”
Section: Introductionmentioning
confidence: 99%
“…Among various CPAA techniques, carbon analysis by Deuteron Activation Analysis (DAA) is extremely sensitive because, already with 2 MeV deuterons, the nuclear reaction C-12(d,n)N-13 (threshold: 0.3 MeV) has a high activation cross-section of nearly 170 mb, permitting its determination in high purity materials [6][7] at parts-per-billion (ppb) level.…”
Section: Introductionmentioning
confidence: 99%