Determination of atomic depth profile in ion-beam mixed bilayer systems from the Rutherford backscattering data

Abstract

Ion-beam irradiation has been extensively used to induce mixed layers and phases formation in the metal-metal and metal-silicon systems. Rutherford backscattering spectrometry (RBS) is currently used to investigate the mixed layers. In such studies, it is important to know the depth profile of each atomic species of the mixed layer. For this purpose, a simple method for the determination of the atomic fraction of each element at a given depth of the mixed layer is described. This method does not need a previous simulation of the experimental RBS spectrum. The atomic depth profile is directly extracted from the experimental data. The atomic fractions are deduced from the backscattered yields of the elements at each channel. The obtained values are used to estimate the thickness of the slab which is equivalent to one channel. The examples of depth profiles of Au, Cr and Si atoms are presented and discussed for the mixed layers of Au/Si and Cr/Si systems induced by Ar + , Kr + and Xe + ions at the fluences ranging from 1×10 16 to 3×10 16 ions/cm 2 .

Ion beam induced surface and interface engineering

“…On the contrary of Au and Ni signals spreading towards Si side, Ar peak at a fluence of 5×10 16 ions/cm 2 shows symmetry around its maximum position implying Gaussian type distribution commonly observed in case of implanted ions in solids at quite low fluences. Moreover, the allocation of Au, Ni and Si atoms corresponding to different depths within the as-deposited and irradiated samples has been calculated using the backscattering data with the help of a direct analytical method [196].…”

“…In another study total mixing has been reported at Au/Si thin film interfaces with Ar ion irradiation. The depth profiles using a computer program [196] reveal two distinct regions. At the surface, a mixed layer with homogeneous concentrations of Au and Si atoms is observed which is of the approximate composition of Au 70 Si 30 .…”

Preparation and Characterization of Zn-Se Bilayer Structure

“…These observations well agree with Holloway and Sinclair [12] in case of Ti-Si thin films. The broaden of peaks in case of Au/Si bilayer structure observed by authors [13] with ion influence.…”

Ion beam induced mixing of co-sputtered Au–Ni films analyzed by Rutherford backscattering spectrometry

“…[17,18]. The method is particularly suitable for this system as the peaks corresponding to different elements are separated and well resolved.…”

“…RBS data of as deposited and ion irradiated samples play the main role in this study and to analyze the data, an efficient analytical method mentioned in Refs. [17,18] has been used. Using that method, depth profiles of different components of co-sputtered and ion irradiated Au-Ni thin films on Si has been investigated.…”