Determination of atomic boron concentration in heavily boron-doped diamond by Raman spectroscopy

Mortet, Vincent; Živcová, Z. Vlčková; Taylor, Andrew; Davydova, Marina; Frank, Otakar; Hubík, P.; Lörinčı́k, Jan; Aleshin, M.

doi:10.1016/j.diamond.2019.01.028

Cited by 58 publications

(30 citation statements)

References 26 publications

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“…This scenario can be also explained, just as in MgB 2 , as result of a Kohn anomaly with proper differences in diamond dictated by the three-dimensional character [243]. Fano-like asymmetries of the Raman features, pointing out a relevant electron-phonon coupling [244,245], have been also reported in borondoped diamond [246][247][248][249], although Fano asymmetry appears to be absent in Ndoped samples [13]. Based on such a strong similarity of the physical properties, we can predict an effective hot-phonon scenario for boron-doped diamond.…”

Section: Wider View On Other Compounds and Perspectivesmentioning

confidence: 85%

Properties and challenges of hot-phonon physics in metals: MgB$_2$ and other compounds

Cappelluti,

Caruso,

Novko

2022

Preprint

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The ultrafast dynamics of electrons and collective modes in systems out of equilibrium is crucially governed by the energy transfer from electronic degrees of freedom, where the energy of the pump source is usually absorbed, to lattice degrees of freedom. In conventional metals such process leads to an overall heating of the lattice, usually described by an effective lattice temperature T ph , until final equilibrium with all the degrees of freedom is reached. In specific materials, however, few lattice modes provide a preferential channel for the energy transfer, leading to a non-thermal distribution of vibrations and to the onset of hot phonons, i.e., lattice modes with a much higher population than the other modes. Hot phonons are usually encountered in semiconductors or semimetal compounds, like graphene, where the preferential channel towards hot modes is dictated by the reduced electronic phase space. Following a different path, the possibility of obtaining hot-phonon physics also in metals has been however also recently prompted in literature, as a result of a strong anisotropy of the electron-phonon (el-ph) coupling. In the present paper, taking MgB 2 as a representative example, we review the physical conditions that allow a hot-phonon scenario in metals with anisotropic el-ph coupling, and we discuss the observable fingerprints of hot phonons. Novel perspectives towards the prediction and experimental observation of hot phonons in other metallic compounds are also discussed. Contents 1 Introduction 32 Energy transfer and relaxation processes in time-resolved pump-probe experiments 7

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Section: Wider View On Other Compounds and Perspectivesmentioning

confidence: 85%

Properties and challenges of hot-phonon physics in metals: MgB$_2$ and other compounds

Cappelluti,

Caruso,

Novko

2022

Preprint

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“…The boron-doping affects the diamond line causing a shift towards lower wavenumbers. Additionally, for the 10 k and 15 k, the sp 3 peak is strongly asymmetric which is attributed to the Fano effect [42], a result of interference between the scattering by the zone-center phonon line and the scattering by an electronic continuum [43,44]. It is worth noting that high levels of doping reveal two broad peaks located at ca.…”

Section: Electrodes Morphology and Compositionmentioning

confidence: 95%

Kinetics of the Organic Compounds and Ammonium Nitrogen Electrochemical Oxidation in Landfill Leachates at Boron-Doped Diamond Anodes

et al. 2021

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Electrochemical oxidation (EO) of organic compounds and ammonium in the complex matrix of landfill leachates (LLs) was investigated using three different boron-doped diamond electrodes produced on silicon substrate (BDD/Si)(levels of boron doping [B]/[C] = 500, 10,000, and 15,000 ppm—0.5 k; 10 k, and 15 k, respectively) during 8-h tests. The LLs were collected from an old landfill in the Pomerania region (Northern Poland) and were characterized by a high concentration of N-NH4+ (2069 ± 103 mg·L−1), chemical oxygen demand (COD) (3608 ± 123 mg·L−1), high salinity (2690 ± 70 mg Cl−·L−1, 1353 ± 70 mg SO42−·L−1), and poor biodegradability. The experiments revealed that electrochemical oxidation of LLs using BDD 0.5 k and current density (j) = 100 mA·cm−2 was the most effective amongst those tested (C8h/C0: COD = 0.09 ± 0.14 mg·L−1, N-NH4+ = 0.39 ± 0.05 mg·L−1). COD removal fits the model of pseudo-first-order reactions and N-NH4+ removal in most cases follows second-order kinetics. The double increase in biodegradability index—to 0.22 ± 0.05 (BDD 0.5 k, j = 50 mA·cm−2) shows the potential application of EO prior biological treatment. Despite EO still being an energy consuming process, optimum conditions (COD removal > 70%) might be achieved after 4 h of treatment with an energy consumption of 200 kW·m−3 (BDD 0.5 k, j = 100 mA·cm−2).

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“…Figure 1b shows the Raman spectrum of the heavily boron-doped diamond underlayer grown at B/C = 2000 ppm between 1100 and 1500 cm -1 with a laser excitation wavelength of 488 nm and its decoupled double Fano-function fit using the online fitting tool at https://ofm.fzu.cz/cs/raman-tool to determine the boron concentration of ca. 10 21 cm -3 from the width (12.32 cm -1 ) of the undisturbed zone center phonon line of diamond [4]. This highly boron-doped diamond layer has a low resistivity of 2 mΩ.cm, allowing the formation of ohmic contact with a specific contact resistance below 10 -6 Ω.cm -2 suitable for the fabrication of low ON resistance Schottky diodes [1].…”

Section: Methodsmentioning

confidence: 99%

Study of cracks formation in HIGHLY – low boron-doped epitaxial (113) diamond bilayers

Klimša

Lambert

Davydova

et al. 2021

NANOCON 2021 Conference Proeedings

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In this work, we present the study of the formation of cracks in high and low boron-doped diamond epitaxial bilayers necessary in the fabrication process of Schottky diodes. Epitaxial diamond layers were grown on (113) oriented diamond substrates by Microwave Plasma Enhanced Chemical Vapor Deposition. The effect of the thickness and the methane concentration during the growth of the undoped diamond layer on the crack formation have been studied using optical and scanning electron microscopy (SEM). We experimentally observed a critical thickness of ca. 3.5 µm above which all undoped layers are cracked. The formation of these cracks is attributed to the relaxation of the elastic energy stored in the epitaxial undoped layer due to the significant lattice mismatch (ca. 0.8 %) between the undoped and highly boron-doped diamond layers with a boron concentration of 10 21 cm -3 as determined by Raman spectroscopy analysis.

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Determination of atomic boron concentration in heavily boron-doped diamond by Raman spectroscopy

Cited by 58 publications

References 26 publications

Properties and challenges of hot-phonon physics in metals: MgB$_2$ and other compounds

Properties and challenges of hot-phonon physics in metals: MgB$_2$ and other compounds

Kinetics of the Organic Compounds and Ammonium Nitrogen Electrochemical Oxidation in Landfill Leachates at Boron-Doped Diamond Anodes

Study of cracks formation in HIGHLY – low boron-doped epitaxial (113) diamond bilayers

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