Determination of adhesion and delamination prediction for semiconductor packages by using Grey Scale Correlation and Cohesive Zone Modelling

Goroll, Michael; Pufall, Reinhard

doi:10.1016/j.microrel.2012.06.054

Cited by 15 publications

(2 citation statements)

References 20 publications

(27 reference statements)

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“…The calculated results ( Table 1 ) were compared with actual experimental data. The maximum adhesion force between the EMC and Cu lead frame reported in the literature, based on the button shear test, was ∼114 N. 64 The adhesion stress was calculated to be 28.4 MPa for button dimensions of 2 × 2 × 2 mm. Conversely, the adhesion stress calculated in our study was as high as 1.55 GPa for Cu(111) and 2.18 GPa for Cu 2 O(111) surfaces.…”

Section: Resultsmentioning

confidence: 98%

Elucidation of Adhesive Interaction between the Epoxy Molding Compound and Cu Lead Frames

Tsurumi¹,

Tsuji

Masago

et al. 2021

ACS Omega

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Clarification of adhesive interactions in semiconductor packages can improve reliability of power electronics. In this study, the adhesion interfaces between the epoxy molding compound and Cu-based lead frames were analyzed using the density functional theory. A resin fragment was prepared based on the polymer framework formed in the curing reaction of epoxy cresol novolac (ECN) and phenol novolac (PN), which are typical molding materials. The resin fragment was optimized on the surfaces of Cu and Cu 2 O. We calculated the charge density differences for adhesion structures and discussed the origin of adhesive interactions. The ECN–PN fragment’s adhesion to the Cu surface relied mainly on dispersion forces, whereas in the case of Cu 2 O, the resin bonded chemically to the surface via (1) σ-bonds formed between the ECN–PN’s OH group oxygen and coordinatively unsaturated copper (Cu CUS ) and (2) hydrogen bonds between resin’s OH groups and coordinatively unsaturated oxygen (O CUS ) located close to to Cu CUS , resulting in a stable adhesive structure. The energy required to detach the resin fragment from the optimized structure was determined using the nudged elastic band method in each model of the adhesive interface. Morse potential curve was used to approximate the obtained energy, and the energy differentiation by detachment distance yielded the theoretical adhesive force. The maximum adhesive stress was 1.6 and 2.2 GPa for the Cu and Cu 2 O surfaces, respectively. The extent to which the ECN–PN fragment bonded to the Cu 2 O surface stabilized was 0.5 eV higher than in the case of the Cu surface.

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Section: Resultsmentioning

confidence: 98%

Elucidation of Adhesive Interaction between the Epoxy Molding Compound and Cu Lead Frames

Tsurumi¹,

Tsuji

Masago

et al. 2021

ACS Omega

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“…The mechanical stability of the interfaces affects the performance and service life of these devices under a broad range of operating conditions [1][2][3][4][5][6]. Interfacial delamination can lead to localised oxidation or corrosion of the substrate due to moisture incursion, dielectric leakage, shorting of adjacent structure and loss of gate control [7][8][9][10]. The current lack of reliable techniques to assess the properties of interfaces in small-scale integrated systems continues to pose significant challenge to the design of new devices and manufacturing process improvement.…”

Section: Introductionmentioning

confidence: 99%

Interfacial adhesion assessment of SiN/GaAs film/substrate system using microcantilever bending technique

Lin¹,

Zhao²,

Wang³

et al. 2022

J. Phys. D: Appl. Phys.

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In this study, a microcantilever bending technique was applied to evaluate the interfacial adhesion of a silicon nitride (SiN) film on a gallium arsenide (GaAs) substrate. Miniaturised cantilevers in micrometre scale were machined on the SiN/GaAs cross-section using focused ion beam milling. Subsequent bending tests was performed on a nanomechanical testing system. Static and cyclic loadings were applied to bend the cantilevers until they fractured. All cantilevers failed at the SiN/GaAs interface. A finite element analysis (FEA) model was used to simulate the deflection of the cantilevers and the stress state at the locus of failure was analysed. Interfacial fracture strength σin was derived from the FEA model. The mean values of σin from the static and cyclic loading tests were 0.8 ± 0.2 and 0.5 ± 0.1 GPa, respectively. An energy balance analysis was then used to evaluate an interfacial toughness of Gin = 0.18 ± 0.05 J/m2.

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Experimental determination of critical adhesion energies with the Advanced Button Shear Test

Pflügler

Reuther

Goroll

et al. 2019

Microelectronics Reliability

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Determination of adhesion and delamination prediction for semiconductor packages by using Grey Scale Correlation and Cohesive Zone Modelling

Cited by 15 publications

References 20 publications

Elucidation of Adhesive Interaction between the Epoxy Molding Compound and Cu Lead Frames

Elucidation of Adhesive Interaction between the Epoxy Molding Compound and Cu Lead Frames

Interfacial adhesion assessment of SiN/GaAs film/substrate system using microcantilever bending technique

Experimental determination of critical adhesion energies with the Advanced Button Shear Test

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