2005
DOI: 10.1063/1.1851871
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Determination and reduction of ion-beam etching induced magnetic dead layer

Abstract: NiFe films with different thicknesses as were etched under several Ar+-ion-beam energy conditions. The functional dependence of the saturation magnetic flux on the remaining NiFe film thickness was used to determine the magnetic dead layer (MDL) thickness (tMDL). A tMDL of 24Å was generated in the NiFe films etched using a 1200-eV Ar+-ion beam. A dual-energy (1200eV∕400eV) etching process was found to be effective in reducing tMDL to 16Å without much throughput loss. A combination of optimal etching depth with… Show more

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Cited by 7 publications
(3 citation statements)
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“…This result suggests that the DLC3 group, although having a thicker DLC film, may have undergone unintentionally a more aggressive plasma etch exposure, here assigned to natural process variation. IBE1 and IBE2 groups are the most statistically separated pairwise, which is expected since different etch recipes can strongly change the metal surface [14]. It is postulated that non-uniform oxidation of the original surface prior to IBE leads to preferential etching of those more oxidized spots, exacerbating the non-uniformity and surface roughness (and asperities).…”
Section: Applying Different Rationales Comparatively On Different Nif...mentioning
confidence: 99%
“…This result suggests that the DLC3 group, although having a thicker DLC film, may have undergone unintentionally a more aggressive plasma etch exposure, here assigned to natural process variation. IBE1 and IBE2 groups are the most statistically separated pairwise, which is expected since different etch recipes can strongly change the metal surface [14]. It is postulated that non-uniform oxidation of the original surface prior to IBE leads to preferential etching of those more oxidized spots, exacerbating the non-uniformity and surface roughness (and asperities).…”
Section: Applying Different Rationales Comparatively On Different Nif...mentioning
confidence: 99%
“…With the increase of film thickness, the detection depth of TEY will be impossible to touch the MDL, and the effect of MDL become smaller and smaller. As for the disappearance of atomic ferromagnetic behaviors caused by MDL, there are different physical mechanisms in various sample systems [17][18][19].…”
Section: ) 3 Cos Cosmentioning
confidence: 99%
“…1,2 Device applications such as magnetic recording field sensors and magnetic random access memory (MRAM) commonly use exchange biased thin films [3][4][5] to optimize device performance. During ion milling, device films are exposed to energetic ions which can modify the magnetic 6,7 and exchange bias properties 8,9 of the films. Clearly device edges are most susceptible to damage during this process, 10 but distinguishing systematic changes in magnetic film properties from random variations in device performance is not trivial.…”
mentioning
confidence: 99%