Abstract:The atomic geometry of the CuCKl 10)-(1 x 1) surface is determined by dynamical analysis of lowenergy electron-diffraction intensities. This surface undergoes a relaxation characterized by a -30° Cu-Cl surface bond rotation, a 0.15 A contraction of the top-to-second layer distance, and a 0.4 A horizontal displacement of CI relative to Cu. The relaxation is consistent with the "universal" structure deduced from the analysis of cleavage surfaces of tetrahedrally coordinated III-V and II-VI compounds, thereby rev… Show more
“…We generalized the usual coordinates used to define such relaxations 5 by defining separate rotation angles for the two distinct surface cations with respect to an average position of the two surface anions, obtaining Cu ϭ36.1°and In ϭ38.7°. These surface rotation angles are larger than in typical II-VI and III-V compounds (25°Ͻ Ͻ33°) and approach those seen in experimental studies of the CuCl ͑110͒ surface ͑41.3°and 44.1°, respectively.͒ 24 These large rotation angles reflect the greater ionic character in CIS relative to the III-Vs and II-VIs. Bonds in the second atomic layer of the CIS ͑110͒ slab rotate by about Ϫ6°while those in the third layer rotate from the plane of the slab by less than 1°.…”
In zinc-blende semiconductors, the nonpolar ͑110͒ surface is more stable than all polar surfaces because the formation of the latter requires the creation of charge-neutralizing but energetically costly surface reconstruction. Our first-principles calculations on CuInSe 2 reveal this in the double-zinc-blende ͑chalcopyrite͒ structure, the defect-induced reconstructions make the ͑112͒-cation plus (1 1 2)-anion polar facets lower in energy than the nonpolar ͑110͒ plane, despite the resulting increased surface area. We show that this spontaneous facetting results from the remarkable stability of surface defects ͑Cu vacancy, Cu-on-In antisite͒ in chalcopyrites, and explains the hitherto puzzling formation of polar microfacets when one attempts to grow epitaxialloy a nonpolar chalcopyrite surface.
“…We generalized the usual coordinates used to define such relaxations 5 by defining separate rotation angles for the two distinct surface cations with respect to an average position of the two surface anions, obtaining Cu ϭ36.1°and In ϭ38.7°. These surface rotation angles are larger than in typical II-VI and III-V compounds (25°Ͻ Ͻ33°) and approach those seen in experimental studies of the CuCl ͑110͒ surface ͑41.3°and 44.1°, respectively.͒ 24 These large rotation angles reflect the greater ionic character in CIS relative to the III-Vs and II-VIs. Bonds in the second atomic layer of the CIS ͑110͒ slab rotate by about Ϫ6°while those in the third layer rotate from the plane of the slab by less than 1°.…”
In zinc-blende semiconductors, the nonpolar ͑110͒ surface is more stable than all polar surfaces because the formation of the latter requires the creation of charge-neutralizing but energetically costly surface reconstruction. Our first-principles calculations on CuInSe 2 reveal this in the double-zinc-blende ͑chalcopyrite͒ structure, the defect-induced reconstructions make the ͑112͒-cation plus (1 1 2)-anion polar facets lower in energy than the nonpolar ͑110͒ plane, despite the resulting increased surface area. We show that this spontaneous facetting results from the remarkable stability of surface defects ͑Cu vacancy, Cu-on-In antisite͒ in chalcopyrites, and explains the hitherto puzzling formation of polar microfacets when one attempts to grow epitaxialloy a nonpolar chalcopyrite surface.
“…15 However, the I-VII noble-metal halides ͑e.g., CuCl͒, which are the most ionic group of tetrahedrally coordinated compounds, have very large ͑110͒ surface rotation angles ͑ϳ41°-44°͒. 16 Thus ionicity cannot be a general case of small surface rotations, though it does appear to be important 16 for surface bond contraction. Another possibility would be the large size mismatch between the Ga and N atoms, e.g., the difference of 0.56 Å in their Pauling 17 covalent radii.…”
The results of a study of the surface relaxation of GaN in the framework of the ab initio ͑all-electron͒ Hartree-Fock method are presented. We perform total-energy calculations using a two-dimensionally periodic slab model for the most stable nonpolar cleavage faces, namely, the ͑1010͒ and ͑110͒ surfaces of the wurtzite and zinc-blende phases, respectively. For both surfaces, when the energy is minimized the Ga-N surface bonds show a very small rotation angle of about 6°accompanied by a reduction in surface bond length of about 7%. This result differs from the well-accepted model of the GaP ͑110͒ and GaAs ͑110͒ surfaces, where there is a large rotational angle in the range of 27°-31°and little change in surface bond length. The structure dependence of the calculated density of states suggests that this difference is at least partly due to interaction of the Ga 3d states with N 2s-derived states in GaN. Partial double-bond character in the surface bond may also be important.
“…Second, beginning in 1987, Kasowski and co-workers 5-7 revived an earlier notion 8-10 that the zinc-blende ͑110͒ surface structures should depend sensitively on ionicity and at high ionicities collapse to slightly relaxed bulklike structures. Although contradicted by several early experimental results 11,12 and subsequent structural studies, 13,14 this notion of ionicityinduced structural collapse seems to live on. Thus the present study of highly ionic ͑Phillips ionicity 15 f i ϭ0.72͒ CdTe͑110͒ by LEPD was undertaken to provide another independent experimental test of its validity.…”
The atomic geometry of the ͑110͒ surface of CdTe has been determined by low-energy positron diffraction ͑LEPD͒. Diffracted intensities of 13 inequivalent beams were measured at sample temperatures of 110 K over an energy range 20 eVрEр140 eV. These intensity energy profiles were analyzed using a multiple-scattering dynamical theory. The surface structural parameters were determined via a comparison of the calculated and experimentally measured profiles. An uncertainty analysis scheme, expanded from the analogous one proposed for analyses of low-energy electron diffraction intensities, was used to estimate the uncertainties in the structural parameters so as to reflect accurately uncertainties in the measured data. This analysis is based on a minimum-variance least-squares R factor R MV , defined and applied to the LEPD data from CdTe͑110͒. It yields the top-layer rotation angle 1 ϭ30.0Ϯ0.5°; the second-layer rotation angle 2 ϭϪ6.9Ϯ0.2°; and bond lengths d(c 2 Ϫa 1 )ϭ2.84Ϯ0.02 Å, d(c 1 Ϫa 1 )ϭ2.74Ϯ0.01 Å, and d(c 1 Ϫa 2 )ϭ2.65Ϯ0.02 Å. The uncertainty intervals quoted are the 95% confidence limits ͑Ϯ2, where is the rms standard deviation͒ associated with an analysis of the uncertainties in the measured LEPD intensities. Uncertainties in the structural parameters associated with those in the construction of the model of the diffraction process could not be estimated quantitatively. These results agree well with prior structure determinations based on low-energy electron diffraction intensity analysis and x-ray standing waves. They confirm that when measured in units of the bulk lattice constant, the atomic geometry of highly ionic CdTe͑110͒ is comparable to that of the ͑110͒ surfaces of other III-V and II-VI semiconductors rather than collapsing to a nearly unrelaxed bulk structure as predicted by an analysis of the role of ionicity on the atomic geometries of the ͑110͒ surfaces of zinc-blende structure binary compound semiconductors.
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