DOI: 10.14393/ufu.di.2018.1185
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Determinação de parâmetros de módulos fotovoltaicos utilizando o método de Newton Raphson e algoritmos genéticos

Abstract: A caminhada até aqui não foi fácil e, graças a Deus, também não foi sozinha. Tive a ajuda e apoio de várias pessoas que, de forma direta e indireta, colaboraram para a conclusão deste mestrado. Gostaria de exprimir meus sinceros agradecimentos... Primeiramente a Deus, pela sabedoria, por estar comigo em todos os momentos, me fazendo perseverar e me dando forças quando eu mais precisei para suportar as dificuldades. Ao meu companheiro, marido e amigo Rafael que, por várias vezes, com suas palavras sábias, acalm… Show more

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Cited by 3 publications
(7 citation statements)
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“…Several studies that apply heuristic algorithms for PV simulation add a wide variety of current-voltage (I × V) data external to the datasheet [10,[19][20][21]. These external data can be obtained in the following ways: experimentally with field measurements, by pre-existing simulations of the module, and using external studies carried out previously [13].…”
Section: Introductionmentioning
confidence: 99%
“…Several studies that apply heuristic algorithms for PV simulation add a wide variety of current-voltage (I × V) data external to the datasheet [10,[19][20][21]. These external data can be obtained in the following ways: experimentally with field measurements, by pre-existing simulations of the module, and using external studies carried out previously [13].…”
Section: Introductionmentioning
confidence: 99%
“…The reverse saturation current of diode (I0), has a low intensity value, usually in the order of 10 −7 –10 −6 A for silicon diodes 9 . Therefore, the range was adopted that varies from 10 −8 –10 −5 A.…”
Section: Methodsmentioning
confidence: 99%
“…Some simplifications can be done. For example, in Equation ( 6), I 0,ref can be considered zero since it is a minimal value for any diode, thus obtaining Equation (9).…”
Section: Modelingmentioning
confidence: 99%
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