Detector performance and defect densities in CdZnTe after two-step annealing

Kim, Eunhye; Kim, Yong‐Hoon; Bolotnikov, A. E.; James, R. B.; Kım, Kihyun

doi:10.1016/j.nima.2019.01.064

Cited by 14 publications

(3 citation statements)

References 7 publications

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“…Results show that CdTe alloyed with Zn has a higher optical transmission than pure CdTe, which could indicate that the addition of Zn reduces the amount of defects. The crystalline quality of pure CdTe could be improved by annealing the treatment after growth [ 48 ], reducing the amount of defects.…”

Section: Resultsmentioning

confidence: 99%

Crystalline Quality, Composition Homogeneity, Tellurium Precipitates/Inclusions Concentration, Optical Transmission, and Energy Band Gap of Bridgman Grown Single-Crystalline Cd1−xZnxTe (0 ≤ x ≤ 0.1)

et al. 2021

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Cd1−xZnxTe (0 ≤ x ≤ 0.1) ingots were obtained by Bridgman’s method using two different speeds in order to find the optimal conditions for single-crystalline growth. Crystalline quality was studied by chemical etching, the elemental composition by wavelength dispersive spectroscopy (WDS), tellurium (Te) precipitates/inclusions concentration by differential scanning calorimetry (DSC), optical transmission by Fourier transformed infrared spectrometry (FTIR), and band gap energy (Egap) by photoluminescence (PL). It was observed that the ingots grown at a lower speed were those of the best crystalline quality, having at most three grains of different crystallographic orientation. The average dislocations density in all of them were similar and correspond to materials of good quality. EPMA results indicated that the homogeneity in the composition was excellent in the ingots central part. The concentration of Te precipitates/inclusions in all ingots was below the instrument (DSC) detection limit, 0.25% wt/wt. In the case of wafers from Cd0.96Zn0.04Te and Cd0.90Zn0.10Te ingots, the optical transmission was better than that of commercial materials and varied between 60% and 70%, while for pure CdTe, the transmission range was between 50% and 55%, the latter being decreased by the presence of Te precipitates/inclusions. The band gap energy Eg of different wafers was experimentally obtained by PL measurements at 76 K. We observed that Eg increased with the Zn concentration of the wafers, following a linear regression comparable to those proposed in the literature, and consistent with the results obtained with other techniques.

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Section: Resultsmentioning

confidence: 99%

Crystalline Quality, Composition Homogeneity, Tellurium Precipitates/Inclusions Concentration, Optical Transmission, and Energy Band Gap of Bridgman Grown Single-Crystalline Cd1−xZnxTe (0 ≤ x ≤ 0.1)

et al. 2021

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“…Trapping is caused by crystal defects such as Te precipitates (e.g. Bolke et al, 2017;Winkler et al, 2019;Kim et al, 2019;Yakimov et al, 2019;Brovko and Ruzin, 2020;McCoy et al, 2020).…”

Section: Trappingmentioning

confidence: 99%

Cadmium Zinc Telluride Detectors for a Next-Generation Hard X-ray Telescope

Tang,

Kislat,

Krawczynski

2021

Preprint

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We are currently developing Cadmium Zinc Telluride (CZT) detectors for a next-generation space-borne hard X-ray telescope which can follow up on the highly successful NuSTAR (Nuclear Spectroscopic Telescope Array) mission. Since the launch of NuSTAR in 2012, there have been major advances in the area of X-ray mirrors, and state-of-the-art X-ray mirrors can improve on NuSTAR's angular resolution of ∼1 arcmin Half Power Diameter (HPD) to 15 or even 5 HPD. Consequently, the size of the detector pixels must be reduced to match this resolution. This paper presents detailed simulations of relatively thin (1 mm thick) CZT detectors with hexagonal pixels at a next-neighbor distance of 150 µm. The simulations account for the non-negligible spatial extent of the deposition of the energy of the incident photon, and include detailed modeling of the spreading of the free charge carriers as they move toward the detector electrodes. We discuss methods to reconstruct the energies of the incident photons, and the locations where the photons hit the detector. We show that the charge recorded in the brightest pixel and six adjacent pixels suffices to obtain excellent energy and spatial resolutions. The simulation results are being used to guide the design of a hybrid application-specific integrated circuit (ASIC)-CZT detector package.

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“…(3,4) GaN has numerous attractive properties, such as a wide bandgap and high thermal stability, which render it suitable for radiation detection at room temperature. Various materials have been studied as promising radiation detectors, including silicon (Si), (5)(6)(7) cadmium telluride (CdTe), (8)(9)(10) cadmium zinc telluride (CZT), (11,12) silicon carbide (SiC), (13,14) thallium bromide (TlBr), (15)(16)(17) and GaN. (18,19) BGaN, an alloy crystal containing BN and GaN, has recently been proposed as a neutron detector semiconductor.…”

Section: Introductionmentioning

confidence: 99%

Temperature Dependence of α-Particle Detection Performance of GaN PIN Diode Detector

Nakagawa,

Hayashi,

Miyazawa

et al. 2024

Sensors and Materials

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Group-III nitride semiconductors, such as gallium nitride (GaN), have been proposed as novel materials for radiation detection owing to their wide bandgap and their ability to operate at high temperatures. In this study, the radiation detection properties of GaN PIN diode detectors were evaluated at high temperatures (~573 K). The energy spectrum peak profiles of 241 Am α-particles were obtained at different temperatures, confirming the operation of GaN PIN diodes up to 573 K. The peak positions shifted toward the lower-energy side and the full width at half maximum (FWHM) of the detection energy peak improved with increasing temperature. Furthermore, the variation in electron carrier mobility-lifetime product (μ e τ e ) between 293 and 573 K was not significant. These results indicate the potential high-temperature operation of group-III nitride semiconductors. Additionally, the variation in each detection characteristic was caused by increasing the atmospheric temperature, which affected the mobility, lattice scattering, bandgap, and built-in potential differently.

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Detector performance and defect densities in CdZnTe after two-step annealing

Cited by 14 publications

References 7 publications

Crystalline Quality, Composition Homogeneity, Tellurium Precipitates/Inclusions Concentration, Optical Transmission, and Energy Band Gap of Bridgman Grown Single-Crystalline Cd1−xZnxTe (0 ≤ x ≤ 0.1)

Crystalline Quality, Composition Homogeneity, Tellurium Precipitates/Inclusions Concentration, Optical Transmission, and Energy Band Gap of Bridgman Grown Single-Crystalline Cd1−xZnxTe (0 ≤ x ≤ 0.1)

Cadmium Zinc Telluride Detectors for a Next-Generation Hard X-ray Telescope

Temperature Dependence of α-Particle Detection Performance of GaN PIN Diode Detector

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