Detection of unknown localized contamination on silicon wafer surface by sweeping-total reflection X-ray fluorescence analysis

Mori, Yoshihiro; Uemura, Kenichi; Kohno, Hiroshi; Yamagami, Motoyuki; Yamada, Takashi; Shimizu, Kosuke; Onizuka, Yoshinobu; Iizuka, Yoshinori

doi:10.1016/j.sab.2004.05.022

Cited by 12 publications

(13 citation statements)

References 3 publications

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“…Fig. 6 shows the analytical result of sample "C" [5]. Similar to sample "B," a small amount of Fe was detected at one spot (b), presumably a particulate contamination.…”

Section: Methodsmentioning

confidence: 88%

“…Fig. 5 shows the analytical result of sample "B" [5]. The line plot for Fe showed a contaminated spot with an absolute amount of approximately 2 10 atoms.…”

Section: Methodsmentioning

confidence: 99%

“…However, such a movement is practically difficult in a normal machine configuration because existing machines are designed to conduct angle and height adjustments at each individual spot for high accuracy. Therefore, we employed multipoint step-by-step mapping instead of continuous movement for ease of implementation [5].…”

Section: Description Of Methodsmentioning

confidence: 99%

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Sweeping-TXRF: A Nondestructive Technique for the Entire Surface Characterization of Metal Contaminations on Semiconductor Wafers

Mori¹,

Uemura

Kohno

et al. 2005

IEEE Trans. Semicond. Manufact.

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We propose a new mode of total reflection X-ray fluorescence (TXRF) analysis called "Sweeping-TXRF" for the characterization of wafer surface contaminations in semiconductor manufacturing. Essentially, Sweeping-TXRF is the mapping of an entire surface with a very short data acquisition time for each individual spot. Sweeping-TXRF provides three-dimensional views for individual elements on a wafer in a very short period of time, a method that had never before been achieved by traditional methods. Dedicated software for this method was developed and tested, and the results are quite promising for routine contamination characterization.Index Terms-Chemical analysis, mapping, nondestructive analysis, total reflection X-ray fluorescence (TXRF).

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“…Fig. 6 shows the analytical result of sample "C" [5]. Similar to sample "B," a small amount of Fe was detected at one spot (b), presumably a particulate contamination.…”

Section: Methodsmentioning

confidence: 88%

“…Fig. 5 shows the analytical result of sample "B" [5]. The line plot for Fe showed a contaminated spot with an absolute amount of approximately 2 10 atoms.…”

Section: Methodsmentioning

confidence: 99%

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Sweeping-TXRF: A Nondestructive Technique for the Entire Surface Characterization of Metal Contaminations on Semiconductor Wafers

Mori¹,

Uemura

Kohno

et al. 2005

IEEE Trans. Semicond. Manufact.

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show abstract

“…There are several papers on the statistics of the analysis. [21,22] Figure 2 shows the Ca and Fe maps of the marked areas carried out with SR-TXRF. The steps of the grid for the surface scan were matched to the size of the collimator of the detector (8 mm in diameter) and the vertical beam dimension (1.6 mm).…”

Section: Methodsmentioning

confidence: 99%

Feasibility study of SR‐TXRF‐XANES analysis for iron contaminations on a silicon wafer surface

Meirer

Streli

Pepponi

et al. 2008

Surface & Interface Analysis

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The ability to chemically characterize the contamination on silicon wafers is of critical importance to the semiconductor industry. It provides information on possible unwanted chemical processes taking place on the wafer surface and helps in determining the true source of the contamination problem. This type of information is not readily accessible with standard laboratory equipment. Synchrotron radiation-induced total reflection X-ray fluorescence (SR-TXRF) was combined with X-ray absorption near-edge structure (XANES) to determine the chemical state of Fe contaminations on a silicon wafer surface. Main purpose of the study was to test the method for a contamination issue as it could appear in a microelectronic VLSI production fab.

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“…This can be achieved by combination with surface contamination collection methods such as vapor phase decomposition (VPD) and direct acid droplet decomposition (DADD), since the sensitivity of direct TXRF, 1.0 × 10 10 atoms/cm 2 is not sufficient to meet the ITRS specification. However, a new application, sweeping TXRF [2,3], was developed with potential for direct TXRF measurements to maintain their relevance. The sweeping TXRF performs hundreds of point measurements on whole a wafer surface quickly (within 30 min typically), compared to only a few points that could be done in the usual way before.…”

Section: Introductionmentioning

confidence: 99%

Trace metal analysis on hafnium silicate deposited Si wafer by Total Reflection X-ray Fluorescence

Takahara¹,

Murakami²,

Kinashi³

et al. 2008

Spectrochimica Acta Part B: Atomic Spectroscopy

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Detection of unknown localized contamination on silicon wafer surface by sweeping-total reflection X-ray fluorescence analysis

Cited by 12 publications

References 3 publications

Sweeping-TXRF: A Nondestructive Technique for the Entire Surface Characterization of Metal Contaminations on Semiconductor Wafers

Sweeping-TXRF: A Nondestructive Technique for the Entire Surface Characterization of Metal Contaminations on Semiconductor Wafers

Feasibility study of SR‐TXRF‐XANES analysis for iron contaminations on a silicon wafer surface

Trace metal analysis on hafnium silicate deposited Si wafer by Total Reflection X-ray Fluorescence

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