Detection of sub-ppm H2S concentrations by means of SnO2(Pt) thin films, grown by the RGTO technique

Sberveglieri, G.; Groppelli, S.; Nelli, P.; Perego, C.; Valdrè, Giovanni; Camanzi, A.

doi:10.1016/0925-4005(93)85032-6

Cited by 35 publications

(18 citation statements)

References 5 publications

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“…It is clear from the figure that La 0.7 Sr 0.3 CrO 3 sample is more selective to H 2 S gas at 210˚C against all other tested gases viz: NH 3 , LPG and H 2 . As easily seen, the La 0.7 Sr 0.3 CrO 3 was most selective to H 2 S among the gases tested, while it was least selective to NH 3 .…”

Section: Gas Sensing Characteristicsmentioning

confidence: 84%

“…In the recent years, a number of semiconductor sensors have been found to be suitable for H 2 S gas e.g. SnO 2 , WO 3 , In 2 O 3 , ZnO 2 and a few perovskite-type materials like NdFeO 3 and NiFeO 4 [10][11][12][13]. LaCrO 3 based com-pounds are usually synthesized by the traditional solid state reaction method, urea combustion method [14,15].…”

Section: Introductionmentioning

confidence: 99%

“…Meanwhile the type of oil and natural gas is correlative with the concentration of H 2 S. The oil and natural gases mines can be found depending on the concentration of H 2 S. Therefore, the detection and monitoring of H 2 S are of high importance for both resource exploitation and human health. In the recent researchers, a number of semiconductor sensors have been found to be sensitive to H 2 S including WO 3 , In 2 O 3 , ZnO and a few pervoskite type materials [3][4][5][6][7].…”

Section: Introductionmentioning

confidence: 99%

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Structural Characterization of Nanocrystalline La1-xSrxCrO3 Thick Films for H2S Gas Sensors

Kadu¹,

Bodade²,

Bodade³

et al. 2012

JST

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The nanocrystalline of La 1−x Sr x CrO 3 (x = 0.0, 0.1, 0.2, 0.3 & 0.4) were prepared by sol-gel method and their crystal structures & morphology were characterized by X-ray diffraction (XRD) and Transmission Electron Microscopy (TEM). XRD patterns indicate that the average particle size of the nanocrystalline La 0.7 Sr 0.3 CrO 3 in the range of 30 -35 nm. The gas sensing properties were studied towards reducing gases like Ammonia gas (NH 3 ), liquefied petroleum gas (LPG), hydrogen sulphide (H 2 S) and H 2 gas and it is observed that undoped LaCrO 3 shows response to H 2 S gas at relatively high operating temperature 300˚C. The La 1−x Sr x CrO 3 based sensor with x = 0.3 shows better sensitivity towards H 2 S gas at an operating temperature 210˚C. The effect of Sr doping on sensitivity, response time and recovery time of the sensor in the presence of H 2 S and other reducing gases were studied and discussed.

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Section: Gas Sensing Characteristicsmentioning

confidence: 84%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Structural Characterization of Nanocrystalline La1-xSrxCrO3 Thick Films for H2S Gas Sensors

Kadu¹,

Bodade²,

Bodade³

et al. 2012

JST

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“…20,21 This is the first time that the Pt/GaN Schottky diodes are demonstrated to detect hydrogen sulfide. Because Pt/GaN Schottky diodes have been shown to detect hydrogen and other hydrogen-containing compounds, the results of this study provide useful information for the future application of Pt/GaN Schottky in more complicated environments with multiple gases.…”

Section: Discussionmentioning

confidence: 99%

Pt/GaN Schottky Diodes for Highly Sensitive Hydrogen Sulfide Detection

Xiao

Hsu

Sarangadharan

et al. 2016

ECS J. Solid State Sci. Technol.

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Pt/GaN Schottky diodes were fabricated for detecting hydrogen sulfide at 200 • C. Ga-face GaN was grown on c-plane sapphire substrate by a metal-organic chemical vapor deposition (MOCVD) system. Hydrogen sulfide was mixed with nitrogen and detected from 0.1∼10 ppm with the Pt/GaN Schottky diodes. Hydrogen sulfide caused the current increase in both forward and reversed bias of the Schottky diode. Real-time detection of the hydrogen sulfide was conducted at a forward bias 1.18 V in nitrogen ambient. The sensors show good linear dependence of the current change at forward bias versus the H 2 S gas concentration. The sensitivity in the two ranges from 0.1∼1 ppm and 1∼10 ppm of hydrogen sulfide, are 14.62 and 5.844 μA/ppm, respectively. The detection limit of the sensor is around 0. Hydrogen sulfide is a colorless and highly toxic gas, which is usually found in petroleum drilling, coal mining, or chemical industry. Hydrogen sulfide may cause severe damage to human body when people are exposed in more than 20 ppm. Early detection of hydrogen sulfide can protect people in workplace effectively. Hydrogen sulfide is also resulted from the bacterial degradation of protein, such as from seafood or meat. The concentration of hydrogen sulfide resulted from spoilage food is quite low. Therefore, microsensors for trace hydrogen sulfide detection are attractive for environmental monitoring in workplace and for inspection of the freshness of food as well. Conductive metal oxides, including ZnO, 1 CuO, 2 WO 3 , 3 SnO 2 , 4 and MoO 3 5 were investigated for hydrogen sulfide detection. Tungsten oxide with metal catalysts including Au, Pt and Ag, have showed response of hydrogen sulfide from 2∼30 ppm.6 Polythiophene/WO 3 hybrid structure showed hydrogen sulfide response as low as 5 ppm. 7Molybdenum oxide decorated with reduced graphene oxide showed 50 ppm hydrogen sulfide response.5 Pt/SiO 2 /Si MOS capacitor was also reported to detect more than 250 ppm hydrogen sulfide. 8 However, most of the solid-state microsensors can only detect hydrogen sulfide above 1∼10 ppm. On the other hand, GaN and AlGaN are attractive materials for the fabrication of various chemical and biochemical sensors. A number of sensors based on GaN or AlGaN/GaN Schottky diodes have been investigated as gas sensors. Many of them have been studied for hydrogen detection.9-11 Apart from the hydrogen detection, the Schottky diodes were also reported for detecting propane, 12 carbon monoxide, 13 acetylene (C 2 H 2 ), nitrous oxide (NO 2 ) 9 and ammonia (NH 3 ), 14 due to the good stability of GaN in high temperature and the high sensitivity of the GaN Schottky diodes. In this study, Pt/GaN Schottky is investigated for trace hydrogen sulfide detection in air as low as 0.1 ppm. The detection ranges from 0.1∼10 ppm of hydrogen sulfide. The results show that GaN Schottky diodes are suitable for portable devices, which can be used for instant and real-time hydrogen sulfide detection. ExperimentalThe GaN layer was grown on c-plane sapphire substrate by a metalorganic che...

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“…In addition, concentration of H 2 S varied from the types of oil or natural gas used. [5][6][7][8][9][10][11][12]. This is an approach of having ZrO 2 nanocrystalline thick film as a H 2 S gas sensor.…”

Section: Introductionmentioning

confidence: 99%

Synthesis of Nanostructured ZrO₂ for Gas Sensing Application

Patil¹,

Kajale²,

Patil

et al. 2012

International Journal on Smart Sensing and Intelligent Systems

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Abstract-Nanocrystalline ZrO 2 (Zirconia) has been synthesized by a conventional precipitation method.The structural, morphological, microstructural, optical and gas-sensing properties of ZrO 2 were investigated by using X-ray diffraction analysis (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), UV-vis spectroscopy and static gas sensing unit, respectively. X-ray diffraction pattern and TEM of the synthesized product reveal their nano-crystalline nature with grain size 18 nm and 20 nm, respectively. Gas sensing properties of their thick films, which were fabricated by screen-printing to various gases (O 2 , NO 2 , C 2 H 5 OH, CO, CO 2 , NH 3 , LPG, H 2 S and H 2 ) were tested in ambient air. The ZrO 2 thick films showed a high response and selectivity to H 2 S gas. The effect of operating temperature, gas concentration on the sensing characteristics of these films towards H 2 S was discussed..

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Detection of sub-ppm H2S concentrations by means of SnO2(Pt) thin films, grown by the RGTO technique

Cited by 35 publications

References 5 publications

Structural Characterization of Nanocrystalline La<sub>1-x</sub>Sr<sub>x</sub>CrO<sub>3</sub> Thick Films for H<sub>2</sub>S Gas Sensors

Structural Characterization of Nanocrystalline La<sub>1-x</sub>Sr<sub>x</sub>CrO<sub>3</sub> Thick Films for H<sub>2</sub>S Gas Sensors

Pt/GaN Schottky Diodes for Highly Sensitive Hydrogen Sulfide Detection

Synthesis of Nanostructured ZrO₂ for Gas Sensing Application

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Detection of sub-ppm H2S concentrations by means of SnO2(Pt) thin films, grown by the RGTO technique

Cited by 35 publications

References 5 publications

Structural Characterization of Nanocrystalline La&lt;sub&gt;1-x&lt;/sub&gt;Sr&lt;sub&gt;x&lt;/sub&gt;CrO&lt;sub&gt;3&lt;/sub&gt; Thick Films for H&lt;sub&gt;2&lt;/sub&gt;S Gas Sensors

Structural Characterization of Nanocrystalline La&lt;sub&gt;1-x&lt;/sub&gt;Sr&lt;sub&gt;x&lt;/sub&gt;CrO&lt;sub&gt;3&lt;/sub&gt; Thick Films for H&lt;sub&gt;2&lt;/sub&gt;S Gas Sensors

Pt/GaN Schottky Diodes for Highly Sensitive Hydrogen Sulfide Detection

Synthesis of Nanostructured ZrO2 for Gas Sensing Application

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Structural Characterization of Nanocrystalline La<sub>1-x</sub>Sr<sub>x</sub>CrO<sub>3</sub> Thick Films for H<sub>2</sub>S Gas Sensors

Structural Characterization of Nanocrystalline La<sub>1-x</sub>Sr<sub>x</sub>CrO<sub>3</sub> Thick Films for H<sub>2</sub>S Gas Sensors

Synthesis of Nanostructured ZrO₂ for Gas Sensing Application