Detection of picosecond electrical pulses using the intrinsic Franz–Keldysh effect

Abstract

Published by the AIP PublishingArticles you may be interested in Ultrafast electric field measurements in semiconductors by spectral integration over electric field-induced FranzKeldysh oscillations Appl. Phys. Lett.

50GHz Ge Waveguide Electro-Absorption Modulator Integrated in a 220nm SOI Photonics Platform

“…4(a). The FK effect is known to be a sub-picosecond effect [5] and therefore the speed of the EAM modulators is expected to be RC limited. Fig.…”

Ultrafast charge carrier dynamics in organic (opto)electronic materials

“…11.6(c)) (Mourou and Meyer, 1984) since in microstrip design, the line spacing is governed by substrate thickness and dispersion becomes important at frequencies where the wavelength drops below the line spacing. A major progress was the sampling of the pulse by exploiting the FranzKeldysh effect (Lampin et al, 2001) which is a particularly sensitive optoelectric effect and offers the advantage that the device including emitter and detector can be fabricated monolithically on SI GaAs substrate carrying a LT-GaAs epilayer.…”

High Performance Ge Devices for Electronic-Photonic Integrated Circuits

“…The electro-absorption effect is an ultra-fast process that takes place in sub-ps time scale [10], intrinsically suitable for 100 GHz high speed photonic modulation. Recently, we have demonstrated an enhanced Franz-Keldysh (FK) effect in tensile strained, epitaxial Ge-onSi [11] with a high EA contrast similar to that of Ge quantum wells [12,13].…”