Detection of oxidation-induced compressive stress in Si(100) substrate near the SiO₂/Si interface with atomic-scale resolution

Abstract

The angle-resolved Si 2p photoelectron spectra arising from transition layer formed between bulk SiO 2 and bulk Si(100)-substrate were measured with probing depth of nearly 2 nm. It was found that the oxidation-induced chemical structures are formed on the Si substrate side of the interface. Furthermore, a part of the oxidation-induced chemical structures in the Si substrate near the interface was found to be closely correlated with the oxidation-induced compressive stress near the interface detected by UV Raman spectroscopy.