Detection of ionizing radiation using graphene field effect transistors

Foxe, Michael; López, G.A.; Childres, Isaac; Jalilian, Romaneh; Roecker, Caleb; Boguski, J.; Jovanovic, Igor; Chen, Yong P.

doi:10.1109/nssmic.2009.5401864

Cited by 24 publications

(18 citation statements)

References 7 publications

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“…The prototype of ion-sensitive field-effect transistor has indicated excellent performance for transistors, interconnects, electromechanical switches, infrared emitters and biosensors [29,30]. As shown in Figure 1, it appears similar to the electrolyte-gated FET.…”

Section: Resultsmentioning

confidence: 91%

Analytical model of graphene-based biosensors for bacteria detection

Akbari

Buntat

Kiani

et al. 2015

International Journal of Environmental Analytical Chemistry

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Section: Resultsmentioning

confidence: 91%

Analytical model of graphene-based biosensors for bacteria detection

Akbari

Buntat

Kiani

et al. 2015

International Journal of Environmental Analytical Chemistry

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“…Undoped substrate-devices like in [13,7] suffered from the lack of a large depletion zone, resulting in slow response times, of the order of 20µs due to the weak collection field (and coherent with diffusion-driven motion times in Si). The relative change in current was negligible, with a modulation less than 1% for a single MIP crossing the sensor.…”

Section: Pos(vertex 2016)052mentioning

confidence: 99%

Devices based on 2D materials for on-chip amplification of ionization charges

Ciarrocchi¹,

Forti²,

Iannaccone³

et al. 2017

Proceedings of the 25th International Workshop on Vertex Detectors — PoS(Vertex 2016)

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Pixels detectors are widely used ionizing radiation detection devices in high-energy physics (HEP) experiments. Segmented detectors have been employed for many years due to the need to simultaneously track the thousands of particles emerging from modern colliders. For more precise and accurate measurements one would like to have faster, less noisy and smaller pixels, but current technology imposes several limits on these characteristics. The aim of this work is to explore the possible applications of bi-dimensional materials such as Graphene or transition metal dichalcogenide monolayers (TMDs) to address these problems. In particular, one wants to determine whether nano-electronic devices based on 2D materials could be used to obtain built-in pre-amplification of the pixel signal, thus achieving better detection performance. The working principle is the field-effect modulation of the channel conductivity in a 2D material-based transistor, due to the presence of ionization charges in a silicon absorber. Several architectures are tested, and a final device of choice is presented, with a sketch of a realistic readout system and its noise figure. The conductance modulation due to incoming particles is found to be more than 30%, resulting in a strong current signal, which leads to very favourable signal-to-noise ratios (SNR).

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“…Due to this high sensitivity, reproducibility of electrical characteristics is a key challenge which may be addressed by considering techniques such as encapsulation [ 61 , 62 , 63 ] to reduce atmospheric effects or controlled doping [ 64 , 65 ]. We can also exploit the change of doping through the field effect, whereby a field applied to the graphene shifts its Fermi level [ 43 ] and hence changes the number of charge carriers and therefore the conductivity of the graphene [ 47 , 48 , 66 , 67 , 68 , 69 ]. In Figure 1 c we see the change in conductivity resulting from the application of a gate voltage for four different samples, with hole transport and electron transport at negative and positive gate voltages respectively.…”

Section: Properties Of Single and Bilayer Graphenementioning

confidence: 99%

Towards a Graphene-Based Low Intensity Photon Counting Photodetector

Williams

Alexander-Webber

Lapington

et al. 2016

Sensors

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Graphene is a highly promising material in the development of new photodetector technologies, in particular due its tunable optoelectronic properties, high mobilities and fast relaxation times coupled to its atomic thinness and other unique electrical, thermal and mechanical properties. Optoelectronic applications and graphene-based photodetector technology are still in their infancy, but with a range of device integration and manufacturing approaches emerging this field is progressing quickly. In this review we explore the potential of graphene in the context of existing single photon counting technologies by comparing their performance to simulations of graphene-based single photon counting and low photon intensity photodetection technologies operating in the visible, terahertz and X-ray energy regimes. We highlight the theoretical predictions and current graphene manufacturing processes for these detectors. We show initial experimental implementations and discuss the key challenges and next steps in the development of these technologies.

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Detection of ionizing radiation using graphene field effect transistors

Cited by 24 publications

References 7 publications

Analytical model of graphene-based biosensors for bacteria detection

Analytical model of graphene-based biosensors for bacteria detection

Devices based on 2D materials for on-chip amplification of ionization charges

Towards a Graphene-Based Low Intensity Photon Counting Photodetector

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