2012 IEEE 30th VLSI Test Symposium (VTS) 2012
DOI: 10.1109/vts.2012.6231090
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Detection of gate-oxide defects with timing tests at reduced power supply

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Cited by 11 publications
(5 citation statements)
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“…Indeed, the line between marginal defect and process variation defect can already sometimes seem arbitrary [20]. Given all of these challenges, it should come as no surprise that defects due to small variations in placement, alignment and the shaping of complex features are on the rise [21]. Such lithography-based defects often occur within the boundaries of typical logic gates and standard cell libraries, at the level of transistor gate features and lower level interconnect, where geometries are smallest and lithography is most challenging, such defects often cause subtle parametric variations in circuit behavior [22].…”
Section: Introductionmentioning
confidence: 99%
“…Indeed, the line between marginal defect and process variation defect can already sometimes seem arbitrary [20]. Given all of these challenges, it should come as no surprise that defects due to small variations in placement, alignment and the shaping of complex features are on the rise [21]. Such lithography-based defects often occur within the boundaries of typical logic gates and standard cell libraries, at the level of transistor gate features and lower level interconnect, where geometries are smallest and lithography is most challenging, such defects often cause subtle parametric variations in circuit behavior [22].…”
Section: Introductionmentioning
confidence: 99%
“…Physical weak defects such as resistive open, resistive bridge, and gate-oxide pinhole are considered as important sources of Early Life Failure (ELF), which appear as delay faults [20]. Delay test has been used to detect physical weak defects in a chip, e.g., [5,10,12,15,[21][22][23].…”
Section: State Of the Artmentioning
confidence: 99%
“…Delay fault testing and the impact of operating conditions such as supply voltage have been investigated thoroughly in the past. It has been shown that reducing the supply voltage increases the transistor channel resistance, which results in an increasing electrical impact of a gate-drain (or gatesource) resistive bridge defect, or a drain (or source) resistive open defect [10]. Circuit test under varying operating conditions has been studied in many works such as [24,25], which investigate the effect of supply voltage on the circuit delay and delay testing.…”
Section: State Of the Artmentioning
confidence: 99%
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