Detection of excess crystalline As in GaAs: Nation oxide overlayers by Raman scattering

Jain, Mukesh; Datta, G.; Venkataraman, P; Abbi, S. C.; Jain, Kavita

doi:10.1007/bf02847388

Cited by 4 publications

(1 citation statement)

References 14 publications

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“…Similar results were found on all the investigated nanowires, with pure zinc-blende as well as zinc-blende/wurtzite structure, with high reproducibility. The formation of crystalline As due to heating of GaAs has already been observed and studied under several different experimental conditions [20][21][22][23]. It was proposed that the formation of crystalline As on GaAs films is mediated by the formation of arsenic oxide, which decomposes at the oxide/GaAs interface following the thermally induced interfacial solid-solid reaction As 2 O 3 (s) + 2GaAs(s) → Ga 2 O 3 (s) + 4As(s) [20].…”

Section: Resultsmentioning

confidence: 99%

Local modification of GaAs nanowires induced by laser heating

et al. 2011

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GaAs nanowires were heated locally under ambient air conditions by a focused laser beam which led to oxidation and formation of crystalline arsenic on the nanowire surface. Atomic force microscopy, photoluminescence and Raman spectroscopy experiments were performed on the same single GaAs nanowires in order to correlate their structural and optical properties. We show that the local changes of the nanowires act as a barrier for thermal transport which is of interest for thermoelectric applications.

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