2014
DOI: 10.1063/1.4867074
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Detection of a 2.8 THz quantum cascade laser with a semiconductor nanowire field-effect transistor coupled to a bow-tie antenna

Abstract: The use of a high-electron mobility semiconductor nanowire as transistor channel has recently allowed the extension of the spectral coverage of THz field-effect transistor detectors up to 1.5 THz. In this report, we demonstrate efficient operation of a field-effect transistor detector based on a semiconductor nanowire at a much higher frequency, 2.8 THz, with a responsivity ≈5 V/W in a bandwidth ≈100 kHz, thus proving the full potential of such approach for the detection of THz quantum cascade lasers. Finally,… Show more

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Cited by 22 publications
(16 citation statements)
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“…38 In those devices, the transition between a sub-THz to a few-THz detection does not affect the active element (i.e., the rectifier), but only the coupling architecture: the antenna dimensions shrink to match shorter wavelengths.…”
Section: -3mentioning
confidence: 99%
“…38 In those devices, the transition between a sub-THz to a few-THz detection does not affect the active element (i.e., the rectifier), but only the coupling architecture: the antenna dimensions shrink to match shorter wavelengths.…”
Section: -3mentioning
confidence: 99%
“…A bolometric InAs-nanowire field-effect transistor detector has been demonstrated 25 , and exploited for continuous-wave THz imaging applications 26,27 . More recently, a bolometric detector based upon carbon nanotubes has also been reported 28 .…”
mentioning
confidence: 99%
“…Based on these considerations, we found that the responsivity of sample A at V G = 0 V 6 is R nw = 2.5 V/W (see Methods), more than a factor of two larger than that achieved in THz NW detectors operating at lower frequencies (2.8 THz) in the standard far-field architecture. 31 For sample B, the unbiased responsivity is one order of magnitude lower (R BP = 0.17 V/W).…”
Section: Alternatively the Incident Thz Wave Can Induce A Sd Voltagementioning
confidence: 98%