Detecting Infrared Radiation Beyond the Bandoffset With Intersubband Transitions

Guerra, Lesslie; Penello, Germano Maioli; Pires, M. P.; Pinto, L. D.; Jakomin, R.; Mourão, Renato Teixeira; Degani, Marcos H.; Maialle, M. Z.; Souza, P. L.

doi:10.1109/lpt.2016.2554064

Cited by 14 publications

(8 citation statements)

References 11 publications

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“…Right panel depicts the absorption spectra for transitions with the ground state (blue) and the first excited state (green) as the initial states for the nominal structure thicknesses of 7, 3.0, and 1.5 nm for the central well, barrier, and superlattice well, respectively. Adapted with permission . Copyright 2019, IEEE.…”

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

“…Wavelengths shorter than 1.7 μm, in the near infrared, can be easily reached with band to band transitions using the InGaAlAs alloy with different compositions, while longer wavelengths require intraband transitions in quantum wells, which are, in principle, intrinsically limited by the band offsets of the heterostructures which is around 500 meV, corresponding to wavelengths longer than 2.5 μm. In order to meet these two challenges, specially designed superlattice structures proposed by our group were presented …”

Section: Introductionmentioning

confidence: 99%

“…About a decade later, Leavitt and Little have used, for the first time, this principle to produce an InGaAs/InAlAs QWIP operating at 460 meV (2.7 μm), just below the materials’ band offset. More recently, specially designed superlattice QWIPs, also called SLIPs, enabled the observation of higher‐order localized excited states in the continuum, reaching operation wavelengths within the “forbidden gap,” beyond the band offset …”

Section: Introductionmentioning

confidence: 99%

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Progress in Symmetric and Asymmetric Superlattice Quantum Well Infrared Photodetectors

et al. 2019

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Herein, two challenges are addressed, which quantum well infrared photodetectors (QWIPs), based on III-V semiconductors, face, namely: photodetection within the so-called "forbidden gap", between 1.7 and 2.5 microns, and room temperature operation using thermal sources. First, to reach this forbidden wavelength range, a QWIP which consists of a superlattice structure with a central quantum well (QW) with a different thickness is presented. The different QW in the symmetric structure, which plays the role of a defect in the otherwise periodic structure, gives rise to localized states in the continuum. The proposed InGaAs/InAlAs superlattice QWIP detects radiation around 2.1 microns, beyond the materials bandoffset. Additionally, the wavefunction parity anomaly is explored to increase the oscillator strength of the optical transitions involving higher order states. Second, with the purpose of achieving room temperature operation, an asymmetric InGaAs/InAlAs superlattice, in which the QW with a different thickness is not in the center, is used to detect infrared radiation around 4 microns at 300 K. This structure operates in the photovoltaic mode because it gives rise to states in the continuum which are localized in one direction and extended in the other, leading to a preferential direction for current flow.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Progress in Symmetric and Asymmetric Superlattice Quantum Well Infrared Photodetectors

et al. 2019

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Quantum Well Infrared Photodetector for the SWIR Range

Pereira

Guerra

Penello

et al. 2019

Smart Innovation, Systems and Technologies

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Leaky electronic states for photovoltaic photodetectors based on asymmetric superlattices

Penello

Pereira

Pires

et al. 2018

Applied Physics Letters

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The concept of leaky electronic states in the continuum is used to achieve room temperature operation of photovoltaic superlattice infrared photodetectors. A structural asymmetric InGaAs/InAlAs potential profile is designed to create states in the continuum with the preferential direction for electron extraction and, consequently, to obtain photovoltaic operation at room temperature. Due to the photovoltaic operation and virtual increase in the bandoffset, the device presents both low dark current and low noise. The Johnson noise limited specific detectivity reaches values as high as 1.4 × 1011 Jones at 80 K. At 300 K, the detectivity obtained is 7.0 × 105 Jones.

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Detecting Infrared Radiation Beyond the Bandoffset With Intersubband Transitions

Cited by 14 publications

References 11 publications

Progress in Symmetric and Asymmetric Superlattice Quantum Well Infrared Photodetectors

Progress in Symmetric and Asymmetric Superlattice Quantum Well Infrared Photodetectors

Quantum Well Infrared Photodetector for the SWIR Range

Leaky electronic states for photovoltaic photodetectors based on asymmetric superlattices

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