Detailed surface analysis of V-defects in GaN films on patterned silicon(111) substrates by metal–organic chemical vapour deposition

Gao, Jiang-Dong; Zhang, Jianli; Zhu, Xin; Wu, Xiaoming; Mo, Chunlan; Pan, Shangke; Liu, Junlin; Jiang, Fengyi

doi:10.1107/s1600576719005521

Cited by 7 publications

(3 citation statements)

References 24 publications

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“…This indicates that the V-pits of sample 2 has higher potential barrier height that suppresses non-radiative recombination functionally. Previously, a series of reports suggested that the height of this barrier mainly depends on the size of V-pits [30], [31], [32]. However, in this experiment, it has been demonstrated through SEM that there is no significant difference in the V-pits size between sample 1 and sample 2.…”

Section: Resultsmentioning

confidence: 52%

Fabrication of High Efficiency Green InGaN/GaN MicroLEDs by Modulating Potential Barrier Height of the Sidewall MQWs in V-Pits

Liu,

Zhang,

Zhang

et al. 2024

IEEE Photonics J.

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In this study, Green MicroLEDs with different H2 flow during the barrier growth are investigated. We observe that the Indium composition near V-pits affects potential barrier height of the sidewall multiple quantum wells (MQWs) thus has strong impact on screening effect of V-pits. EQE and relative IQE has a dramatically increase with more hydrogen flow during barrier growth, and thermal endurance and wavelength stability was also improved. The enhancement has been confirmed to come from the reduction of non-radiative recombination centers from small V-pits and higher potential barrier height on sidewall MQWs in V-shaped pits which screen dislocations (TDs). These results demonstrate the advantages of modification H2 flow during barrier growth and also provide a new concept to modulate potential barrier height of the sidewall MQWs for better screening effect for further improvement on MicroLEDs performance.

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Section: Resultsmentioning

confidence: 52%

Fabrication of High Efficiency Green InGaN/GaN MicroLEDs by Modulating Potential Barrier Height of the Sidewall MQWs in V-Pits

Liu,

Zhang,

Zhang

et al. 2024

IEEE Photonics J.

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“…According to the measurement results, the proportion of the V-shaped pit is approximately 30% of surface area corresponding to the fifth (blue) QW in LED S1, and the proportion of the V-shaped pit is approximately 10% of surface area corresponding to the first (green) QW in LED S1. The detailed measurement method was reported previously [23]. Thus, the difference between the ranges of influence of the horizontal electric fields of the blue QW and that of the green QWs is large.…”

Section: Asmentioning

confidence: 99%

“…As a result, most commercial InGaN-based LEDs have V-shaped pits in the structure. Normally, the V-shaped pits are formed in the pre-layer with low growth temperature and high growth rate before multi-quantum wells (MQWs) [22][23][24][25]. Then, the subsequent grown MQWs can have two different shapes: the tilted MQWs on the pit side and the flat MQWs on the terrace.…”

Section: Introductionmentioning

confidence: 99%

Effect of horizontal p–n junction on optoelectronics characteristics in InGaN-based light-emitting diodes with V-shaped pits

Gao¹,

Zhang²,

Quan³

et al. 2020

J. Phys. D: Appl. Phys.

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Two InGaN-based light-emitting diodes (LEDs) with and without pre-layer were prepared, and both had a similar multi-quantum well (MQW) structure with four green QWs near n-GaN and one blue QW close to p-GaN. The pre-layer established large V-shaped pits in MQWs. In addition to the regular vertical p-n junction along c-axis, a kind of horizontal p-n junction created by n-type MQWs and p-GaN filled in V-shaped pits was introduced. And the effect of the horizontal p-n junction on optoelectronics characteristics, including photoluminescence, electroluminescence, and I-V, were discussed. The horizontal p-n junction creates a strong horizontal built-in electric field which can effectively separate the photogenerated carriers in the QW close to p-GaN, leading to the absence of photoluminescence from the QW close to p-GaN. The horizontal p-n junction also provides a path for hole injection, which changes the turn-on order of QW, and reduces the voltage of the LED with large V-shaped pits. These results suggest a new thought of analyzing and designing InGaN-based LEDs with V-shaped pits.

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Effect of different substrates on material properties of cubic GaN thin films grown by LP-MOCVD method

Santis

Marín-García

Sánchez-R

2023

Journal of Crystal Growth

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Detailed surface analysis of V-defects in GaN films on patterned silicon(111) substrates by metal–organic chemical vapour deposition

Abstract: An error in the article by Gao, Zhang, Zhu, Wu, Mo, Pan, Liu & Jiang [J. Appl. Cryst. (2019), 52, 637–642] is corrected.

Cited by 7 publications

References 24 publications

Fabrication of High Efficiency Green InGaN/GaN MicroLEDs by Modulating Potential Barrier Height of the Sidewall MQWs in V-Pits

Fabrication of High Efficiency Green InGaN/GaN MicroLEDs by Modulating Potential Barrier Height of the Sidewall MQWs in V-Pits

Effect of horizontal p–n junction on optoelectronics characteristics in InGaN-based light-emitting diodes with V-shaped pits

Effect of different substrates on material properties of cubic GaN thin films grown by LP-MOCVD method

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