Detailed low frequency noise assessment on GAA NW n-channel FETs

Three-point probe 1/f noise measurement

“…While understanding the noise of a device as a whole is ultimately the goal, should troubleshooting of high NSD be required, deconvolution is necessary to isolate the root cause to channel Si quality or if it lies in other factors, such as metallization and/or doping profile sharpness between the source/drain and channel, for example. This level of granularity from electrical characterization (E-test) is beneficial for process integrators, and 1/f noise characterization has proven useful in advanced-node devices, including gate-all-around (GAA) FETs [3][4][5].…”

Low‐Frequency‐Noise Spectroscopy of TaOx‐based Resistive Switching Memory

“…Since the conduction path can be evaluated quantitatively even at the nanoscale, LFNS studies have been conducted on gate‐all‐around nanowire FETs. [ 37 ] In this study, LFNS measurements were performed to investigate the origin of the resistance change in a ReRAM device over a wide temperature range from low temperature to room temperature. The temperature dependence of the noise spectra at given frequencies revealed that multiple trap levels exist and that they are related to the electrical resistance of the device.…”

“…Since the conduction path can be evaluated quantitatively even at the nanoscale, LFNS studies have been conducted on gate-all-around nanowire FETs. [37] In this study, LFNS measurements were performed to investigate the origin of the resistance change in a ReRAM device over a wide temperature range from Research and development into resistive switching memories, such as resistive random access memory (ReRAM) and memristors, are being actively promoted toward the realization of new computing techniques. To improve the reliability of these devices, it is important to clarify their resistance characteristics.…”