“…[51,52,69,73,98,114,121,125,126] However, the metallic inner tubes are considerably more sensitive to doping than semiconducting ones. [69] In contrast to RBM, the G-bands of inner/outer tubes overlap in pristine DWNTs, [51,52,69,98,112,114,121,125,127] but chemical p-doping selectively upshifts the G-bands of outer tubes. [127] This effect was reproduced for anodic charging of DWNTs.…”