Destruction of phase coherence by electron-phonon interactions in disordered conductors

Rammer, Jørgen; Schmid, Albert

doi:10.1103/physrevb.34.1352

Cited by 120 publications

(104 citation statements)

References 9 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…In general, the responsible dephasing processes are determined by the sample dimensionality, level of disorder, and measurement temperature [133,135,144]. In 3D weakly disordered metals, e-ph scattering is often the dominant dephasing mechanism [100,135,145], while in reduced dimensions (2D and 1D), the e-e scattering is the major dephasing process [135,144,146,147]. As T → 0 K, a constant or very weakly temperature dependent dephasing process may exist in a given sample, the physical origin for which is yet to be fully identified [135,[148][149][150][151][152].…”

Section: Weak-localization Effect and Electron Dephasing Timementioning

confidence: 99%

“…Theoretically, it is established that the electron scattering by transverse vibrations of defects and impurities dominates the e-ph relaxation. In the quasi-ballistic limit (q T l > 1, where q T is the wavenumber of a thermal phonon), ¶ the electron-transverse phonon scattering rate is given by [101,145,155] 1…”

Section: Weak-localization Effect and Electron Dephasing Timementioning

confidence: 99%

See 1 more Smart Citation

Electronic conduction properties of indium tin oxide: single-particle and many-body transport

Lin

2014

J. Phys.: Condens. Matter

View full text Add to dashboard Cite

Abstract.Indium tin oxide (Sn-doped In 2 O 3−δ or ITO) is an interesting and technologically important transparent conducting oxide. This class of material has been extensively investigated for decades, with research efforts focusing on the application aspects. The fundamental issues of the electronic conduction properties of ITO from 300 K down to low temperatures have rarely been addressed. Studies of the electricaltransport properties over a wide range of temperature are essential to unraveling the underlying electronic dynamics and microscopic electronic parameters. In this Topical Review, we show that one can learn rich physics in ITO material, including the semiclassical Boltzmann transport, the quantum-interference electron transport, and the electron-electron interaction effects in the presence of disorder and granularity. To reveal the avenues and opportunities that the ITO material provides for fundamental research, we demonstrate a variety of charge transport properties in different forms of ITO structures, including homogeneous polycrystalline films, homogeneous singlecrystalline nanowires, and inhomogeneous ultrathin films. We not only address new physics phenomena that arise in ITO but also illustrate the versatility of the stable ITO material forms for potential applications. We emphasize that, microscopically, the rich electronic conduction properties of ITO originate from the inherited freeelectron-like energy bandstructure and low-carrier concentration (as compared with that in typical metals) characteristics of this class of material. Furthermore, a low carrier concentration leads to slow electron-phonon relaxation, which causes (i) a small residual resistance ratio, (ii) a linear electron diffusion thermoelectric power in a wide temperature range 1-300 K, and (iii) a weak electron dephasing rate. We focus our discussion on the metallic-like ITO material.

show abstract

Section: Weak-localization Effect and Electron Dephasing Timementioning

confidence: 99%

Section: Weak-localization Effect and Electron Dephasing Timementioning

confidence: 99%

Electronic conduction properties of indium tin oxide: single-particle and many-body transport

Lin

2014

J. Phys.: Condens. Matter

View full text Add to dashboard Cite

show abstract

“…Phonon wave factor q can be further expressed as q = hv S /k B T , where v S is the speed of sound of the phonon mode in metal, k B is the Boltzmann constant and h is the Planck constant. In a dirty limit with ql < 1, theories predict that n ranges from 4 to 6 depending on type and level of disorder 17,18 . Deviations from n = 5 are experimentally observed in normal metals and alloys [19][20][21][22] .…”

mentioning

confidence: 99%

Fast thermometry with a proximity Josephson junction

Wang

Saira

Pekola

2018

Applied Physics Letters

View full text Add to dashboard Cite

We couple a proximity Josephson junction to a Joule-heated normal metal film and measure its electron temperature under steady state and nonequilibrium conditions. With a timed sequence of heating and temperature probing pulses, we are able to monitor its electron temperature in nonequilibrium with effectively zero backaction from the temperature measurement in the form of additional dissipation or thermal conductance. The experiments demonstrate the possibility of using a fast proximity Josephson junction thermometer for studying thermal transport in mesoscopic systems and for calorimetry.Thermometry is a cornerstone in studies of thermodynamics. When the investigated system is in equilibrium, the working speed of a thermometer may not be an important factor, as the system status does not change with time. In the past decades, much progress has been made in understanding thermal transport in nanoscale systems in the steady state [1][2][3] . If the time scale of interest is shorter than thermal relaxation time τ of the relevant system, one needs to measure the system temperature with a fast thermometer in nonequilibrium. The relaxation time increases with lowering temperature, which makes the thermal relaxation time of electrons experimentally accessible at millikelvin temperatures. A thermometer with large bandwidth is still needed to expand the temperature range and the variety of processes that can be observed in non-equilibrium.Fast thermometry with sub-µs time resolution has been realized with Normal MetalInsulator-Superconductor (NIS) tunnel junctions and superconducting weak links embedded in resonant circuits 4-8 . In these methods, the measurement bandwidth is set by the linewidth of the resonant circuit, which can not be increased indefinitely without sacrificing the readout sensitivity. Recently, Ref.[9] has shown nanosecond thermometry using a superconducting nanobridge, introducing the hysteretic JJ as a fast thermometer for calorimetry with easy integration.In this letter, we perform fast, minimally invasive thermometry of an evaporated thin-film using proximity JJs. Instead of using superconducting nanobridge, we utilize proximity JJs consisting of a normal metal weak link contacting two superconducting leads. The normal section of the weak link is galvanically connected to the thin film under study, whose electron temperature can be elevated by Joule heating pulses. We devise a probing scheme that allows us to study the nonequilibrium electron temperature in the thin film with µs time resolution, vanishing dissipation, and virtually zero added heat conductance to the system under study prior to the measurement pulse. Experimental results show the great potential of using proximity JJ thermometer for precision and fast measurements of electron temperature in metallic films.The JJ thermometer consists of a normal metal wire (cyan) sandwiched between Al superconducting electrodes (blue), shown in Scanning Electron Microscope (SEM) image in Fig. 1(b). The inner four electrodes are used in the experim...

show abstract

“…In the absence of magnetic impurities, the phase relaxation originates from inelastic scattering, arising from the contribution of electron-phonon ͑1 / e-ph ͒ and electron-electron ͑1 / ee ͒ scatterings. On the basis of the theory of electron-phonon interaction, 25,26 we have calculated the value of e-ph −1 by using the parameters of GaAs system. We find that, at the highest temperature of measurement, the magnitude of e-ph −1 computed from theory is nearly two order smaller than the measured dephasing scattering rate for all the samples ͓ e-ph −1 ͑theory͒ = 3.378ϫ 10 8 s −1 and −1 ͑expt.͒ = 1.123ϫ 10 11 s −1 at T = 4.28 K of sample 1.75 ML͔.…”

Section: Resultsmentioning

confidence: 99%

Electron dephasing scattering rate in two-dimensional GaAs/InGaAs heterostructures with embedded InAs quantum dots

Pagnossin

Meikap

Quivy

et al. 2008

Journal of Applied Physics

View full text Add to dashboard Cite

We report a comprehensive study of weak-localization and electron-electron interaction effects in a GaAs/InGaAs two-dimensional electron system with nearby InAs quantum dots, using measurements of the electrical conductivity with and without magnetic field. Although both the effects introduce temperature dependent corrections to the zero magnetic field conductivity at low temperatures, the magnetic field dependence of conductivity is dominated by the weak-localization correction. We observed that the electron dephasing scattering rate τφ−1, obtained from the magnetoconductivity data, is enhanced by introducing quantum dots in the structure, as expected, and obeys a linear dependence on the temperature and elastic mean free path, which is against the Fermi-liquid model.

show abstract

Destruction of phase coherence by electron-phonon interactions in disordered conductors

Cited by 120 publications

References 9 publications

Electronic conduction properties of indium tin oxide: single-particle and many-body transport

Electronic conduction properties of indium tin oxide: single-particle and many-body transport

Fast thermometry with a proximity Josephson junction

Electron dephasing scattering rate in two-dimensional GaAs/InGaAs heterostructures with embedded InAs quantum dots

Contact Info

Product

Resources

About