Desorption and sublimation kinetics for fluorinated aluminum nitride surfaces

King, Sean W.; Davis, R. F.; Nemanich, R. J.

doi:10.1116/1.4891650

Cited by 10 publications

(10 citation statements)

References 143 publications

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“…80 As shown in Figs. 47,81 However, the general range of these two H 2 desorption bands is consistent with prior investigations of H 2 desorption from hydrogenated and oxidized Si (001) and (111) surfaces. Other than a slight increase in the intensity for the substrate C 1s core level and Si 2p and O 1s core levels, no other significant changes were observed in the XPS spectra after the remote H-plasma exposure.…”

Section: B Remote H-plasma Clean-xps and Tpdsupporting

confidence: 87%

“…32,84 In particular, Kawase has shown a peak in CH 3 desorption at 450 C for organic contaminated Si (001) surfaces. 81 We do note that we have also previously observed H 2 desorption in this same temperature window from carbon rich 6H-SiC (0001) surfaces produced by exposing a Si rich (3 Â 3) surface to a longer (5 min) remote H 2 plasma. This is consistent with the (0001) orientation of the 6H-SiC substrate that ideally should be silicon terminated.…”

Section: B Remote H-plasma Clean-xps and Tpdsupporting

confidence: 65%

“…We do acknowledge the possibility that the b 1,2b states may also originate from hydrogen released during the decomposition and desorption of the adventitious carbon on the SiC surface. 81 As shown in Fig. 32,84 In particular, Kawase has shown a peak in CH 3 desorption at 450 C for organic contaminated Si (001) surfaces.…”

Section: B Remote H-plasma Clean-xps and Tpdmentioning

confidence: 93%

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Hydrogen desorption from hydrogen fluoride and remote hydrogen plasma cleaned silicon carbide (0001) surfaces

King¹,

Tanaka²,

Davis³

et al. 2015

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Articles you may be interested inDilute hydrogen plasma cleaning of boron from silicon after etching of Hf O 2 films in B Cl 3 plasmas: Substrate temperature dependence Structural, microstructural, and electrical properties of gold films and Schottky contacts on remote plasmacleaned, n -type ZnO{0001} surfaces Enhancement of secondary electron emission by annealing and microwave hydrogen plasma treatment of ionbeam-damaged diamond films Due to the extreme chemical inertness of silicon carbide (SiC), in-situ thermal desorption is commonly utilized as a means to remove surface contamination prior to initiating critical semiconductor processing steps such as epitaxy, gate dielectric formation, and contact metallization. In-situ thermal desorption and silicon sublimation has also recently become a popular method for epitaxial growth of mono and few layer graphene. Accordingly, numerous thermal desorption experiments of various processed silicon carbide surfaces have been performed, but have ignored the presence of hydrogen, which is ubiquitous throughout semiconductor processing. In this regard, the authors have performed a combined temperature programmed desorption (TPD) and x-ray photoelectron spectroscopy (XPS) investigation of the desorption of molecular hydrogen (H 2 ) and various other oxygen, carbon, and fluorine related species from ex-situ aqueous hydrogen fluoride (HF) and in-situ remote hydrogen plasma cleaned 6H-SiC (0001) surfaces. Using XPS, the authors observed that temperatures on the order of 700-1000 C are needed to fully desorb C-H, C-O and Si-O species from these surfaces. However, using TPD, the authors observed H 2 desorption at both lower temperatures (200-550 C) as well as higher temperatures (>700 C). The low temperature H 2 desorption was deconvoluted into multiple desorption states that, based on similarities to H 2 desorption from Si (111), were attributed to silicon mono, di, and trihydride surface species as well as hydrogen trapped by subsurface defects, steps, or dopants. The higher temperature H 2 desorption was similarly attributed to H 2 evolved from surface O-H groups at $750 C as well as the liberation of H 2 during Si-O desorption at temperatures >800 C. These results indicate that while ex-situ aqueous HF processed 6H-SiC (0001) surfaces annealed at <700 C remain terminated by some surface C-O and Si-O bonding, they may still exhibit significant chemical reactivity due to the creation of surface dangling bonds resulting from H 2 desorption from previously undetected silicon hydride and surface hydroxide species.

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Section: B Remote H-plasma Clean-xps and Tpdsupporting

confidence: 87%

Section: B Remote H-plasma Clean-xps and Tpdsupporting

confidence: 65%

Section: B Remote H-plasma Clean-xps and Tpdmentioning

confidence: 93%

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Hydrogen desorption from hydrogen fluoride and remote hydrogen plasma cleaned silicon carbide (0001) surfaces

King¹,

Tanaka²,

Davis³

et al. 2015

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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“…490 From an ES perspective, Al 2 O 3 and other Al containing compounds are attractive due to a demonstrated high resistance to fluorinated plasma etch chemistries. 509 The high resistance to etching by fluorine plasmas is largely due to the low volatility of the predominate AlF 3 etch products formed. 510 This extreme etch resistance can in turn allow the relatively high k of Al 2 O 3 and other Al compounds to be mitigated as an ES by minimizing the thickness utilized as previously mentioned for DB applications.…”

mentioning

confidence: 99%

Dielectric Barrier, Etch Stop, and Metal Capping Materials for State of the Art and beyond Metal Interconnects

King

2014

ECS J. Solid State Sci. Technol.

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132

115

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Over the past decade, the primary focus for improving the performance of nano-electronic metal interconnect structures has been to reduce the impact of resistance-capacitance (RC) delays via utilizing insulating dielectrics with ever lower values of dielectric permittivity. The integration and implementation of such low dielectric constant (i.e. low-k) materials has been fraught with numerous challenges. For intermetal and interlayer (ILD) low-k dielectrics, these challenges have been largely associated to integration with metal interconnect fabrication processes and well documented and reviewed in the literature. Although equally important, less attention has been given to other low-k dielectrics utilized in metal interconnect structures that are commonly referred to as low-k dielectric barriers (DB), etch stops (ES), and/or Cu capping layers (CCL). These materials present numerous challenges as well for integration into metal interconnect fabrication processes. However, they also have more stringent integrated functionality requirements relative to low-k ILD materials that serve only a basic purpose of electrically isolating adjacent metal lines. In this article, we review the integration challenges and associated integrated functionality requirements for low-k DB/ES/CCL materials with a focus on the current status and future direction needed for these materials to facilitate both Moore's law (i.e. More Moore) and More than Moore scaling.

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“…A base pressure of 10 −10 Torr was achieved in the GSMBE system via a 400‐l/s turbo pump and a 500‐l/s ion pump. Substrate temperatures of 1100 °C were achieved via a hot tungsten filament heater …”

Section: Introductionmentioning

confidence: 99%

Cleaning of pyrolytic hexagonal boron nitride surfaces

King

Nemanich

Davis

2015

Surface & Interface Analysis

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Hexagonal boron nitride (h-BN) has recently garnered significant interest as a substrate and dielectric for two-dimensional materials and devices based on graphene or transition metal dichalcogenides such as molybdenum disulfide (MoS 2 ). As substrate surface impurities and defects can negatively impact the structure and properties of two-dimensional materials, h-BN surface preparation and cleaning are a critical consideration. In this regard, we have utilized X-ray photoelectron spectroscopy to investigate the influence of several ex situ wet chemical and in situ thermal desorption cleaning procedures on pyrolytic h-BN surfaces. Of the various wet chemistries investigated, a 10 : 1 buffered HF solution was found to produce surfaces with the lowest amount of oxygen and carbon contamination. Ultraviolet/ozone oxidation was found to be the most effective ex situ treatment for reducing carbon contamination. Annealing at 1050°C in vacuum or 10 À5 Torr NH 3 was found to further reduce oxygen and carbon contamination to the XPS detection limits.

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Desorption and sublimation kinetics for fluorinated aluminum nitride surfaces

Cited by 10 publications

References 143 publications

Hydrogen desorption from hydrogen fluoride and remote hydrogen plasma cleaned silicon carbide (0001) surfaces

Hydrogen desorption from hydrogen fluoride and remote hydrogen plasma cleaned silicon carbide (0001) surfaces

Dielectric Barrier, Etch Stop, and Metal Capping Materials for State of the Art and beyond Metal Interconnects

Cleaning of pyrolytic hexagonal boron nitride surfaces

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