Designing strain-balanced GaN/AlGaN quantum well structures: Application to intersubband devices at 1.3 and 1.55 μm wavelengths

Jovanović, V. D.; Ikonić, Z.; Indjin, D.; Harrison, P.; Milanović, V.; Soref, Richard A.

doi:10.1063/1.1556177

Cited by 42 publications

(27 citation statements)

References 28 publications

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“…A very good agreement between the calculated and measured current-voltage characteristics of the device was obtained, and between the calculated and measured threshold current at 77K (¡ Fig. 2a, assuming the both a-and c-plane crystal growth orientation [34]. The Al content in the barriers is 25% in the a-plane (structure I) and 20 % in the c-plane (structure II) structure.…”

Section: T $mentioning

confidence: 52%

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A physical model of quantum cascade lasers: Application to GaAs, GaN and SiGe devices

Harrison

Indjin

Jovanović

et al. 2005

Physica Status Solidi (a)

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Article:Harrison, P., Indjin, D., Jovanovic, V.D. et al. (7 more Harrison, P. and Indjin, D. and Jovanovic, V.D. and Mircetic, A. and Ikonic, Z. and Kelsall, R.W. and McTavish, J. and Savic, I. and Vukmirovic, N. and Milanovic, V. (2005) The philosophy behind this work has been to build a predictive 'bottom up' physical model of quantum cascade lasers (QCLs) for use as a design tool, to interpret experimental results and hence improve understanding of the physical processes occurring inside working devices and as a simulator for developing new material systems. The standard model uses the envelope function and effective mass approximations to solve two complete periods of the QCL under an applied bias. Other models, such as k.p and empirical pseudopotential, have been employed in p-type systems where the more complex band structure requires it. The resulting wave functions are then used to evaluate all relevant carrier-phonon, carrier-carrier and alloy scattering rates from each quantised state to all others within the same and the neighbouring period. This information is then used to construct a rate equation for the equilibrium carrier density in each subband and this set of coupled rate equations are solved self-consistently to obtain the carrier density in each eigenstate. The latter is a fundamental description of the device and can be used to calculate the current density and gain as a function of the applied bias and temperature, which in turn yields the threshold current and expected temperature dependence of the device characteristics. A recent extension which includes a further iteration of an energy balance equation also yields the average electron (or hole) temperature over the subbands. This paper will review the method and describe its application to mid-infrared and terahertz, GaAs, GaN, SiGe cascade laser designs. Repository paper

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Section: T $mentioning

confidence: 52%

“…The Al content in the barriers is 25% in the a-plane (structure I) and 20 % in the c-plane (structure II) structure. To achieve full strain balance [34], these structures should be grown on (virtual) substrate with…”

Section: T $mentioning

confidence: 99%

A physical model of quantum cascade lasers: Application to GaAs, GaN and SiGe devices

Harrison

Indjin

Jovanović

et al. 2005

Physica Status Solidi (a)

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“…The simplest technique that is widely used in QCL design work is shooting method (Harrison 2006). Finite difference algorithm may also be used (Juang et al 1990;Cassan 2000), in which bands nonparabolicity is included in iterative approach (Jovanović et al 2003;Thobel et al 2003;Cooper et al 2010). Other type of numerical method used for such problems is transfer matrix (Ando and Itoh 1987;Jonsson and Eng 1990;Jirauschek 2009).…”

Section: Numerical Solutions Of the Schrödinger-poisson Equationsmentioning

confidence: 99%

Monte Carlo modeling applied to studies of quantum cascade lasers

2017

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One of the commonly used approaches of solving electron transport problems in quantum cascade lasers (QCL) is the Monte Carlo (MC) method, based on semiclassical description in the framework of the Boltzmann Transport Equation. A major benefit of MC modeling is that it only relies on well-established material parameters and structure specification, in most cases without the need to use phenomenological parameters. The results of the modeling can be easily interpreted and they give microscopic insight of QCL operation. The goal of the present paper is to review the application of the MC technique to the studies of operation of QCL. The description of the components of the simulation algorithm is provided. Various physical mechanisms governing electron transport in QCL are described and their influence on the operation are reviewed.

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“…With this additional criterion, one could design structures that are both polarization and strain balanced. 24 Only in special accidental cases can one fulfill both these criteria using layers within the same class of binary alloys (such as AlGaN).…”

Section: B Prospects and Challengesmentioning

confidence: 99%

“…The concept is similar in spirit to strain balance. 24 The electrical fields in the leads (cladding layers) generally bring about depletion and inversion regions outside the active region. Since the band tailing in the depletion region impedes electron transport, polarization balance helps enable efficient injection into the central active structure.…”

Section: Introductionmentioning

confidence: 99%

Polarization-balanced design of heterostructures: Application to AlN/GaN double-barrier structures

2011

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Inversion and depletion regions generally form at the interfaces between doped leads (cladding layers) and the active region of polar heterostructures like AlN/GaN and other nitride compounds. The band bending in the depletion region sets up a barrier that may seriously impede perpendicular electronic transport. This may ruin the performance of devices such as quantum-cascade lasers and resonant-tunneling diodes. Here we introduce the concepts of polarization balance and polarization-balanced designs: A structure is polarization balanced when the applied bias match the voltage drop arising from spontaneous and piezeolectric fields. Devices designed to operate at this bias have polarization-balanced designs. These concepts offer a systematic approach to avoid the formation of depletion regions. As a test case, we consider the design of AlN/GaN double-barrier structures with AlxGa 1−x N leads. To guide our efforts, we derive a simple relation between the intrinsic voltage drop arising from polar effects, average alloy composition of the active region, and the alloy concentration of the leads. Polarization-balanced designs secure good filling of the ground state for unbiased structures, while for biased structures with efficient emptying of the active region they remove the depletion barriers.

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Designing strain-balanced GaN/AlGaN quantum well structures: Application to intersubband devices at 1.3 and 1.55 μm wavelengths

Cited by 42 publications

References 28 publications

A physical model of quantum cascade lasers: Application to GaAs, GaN and SiGe devices

A physical model of quantum cascade lasers: Application to GaAs, GaN and SiGe devices

Monte Carlo modeling applied to studies of quantum cascade lasers

Polarization-balanced design of heterostructures: Application to AlN/GaN double-barrier structures

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