2011 14th Euromicro Conference on Digital System Design 2011
DOI: 10.1109/dsd.2011.55
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Designing Robust Asynchronous Circuits Based on FinFET Technology

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Cited by 4 publications
(2 citation statements)
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“…The proposed cells can provide better Read Static Noise Margin (RSNM) , higher density, and lower standby leakage current than conventional 10T Schmitt Trigger sub-threshold SRAM cells. Jafari et al have proven that FinFET is a promising technology for designing robust and power efficient asynchronous circuits [15]. A novel FinFET based domino logic is presented in [16].…”
Section: Introductionmentioning
confidence: 99%
“…The proposed cells can provide better Read Static Noise Margin (RSNM) , higher density, and lower standby leakage current than conventional 10T Schmitt Trigger sub-threshold SRAM cells. Jafari et al have proven that FinFET is a promising technology for designing robust and power efficient asynchronous circuits [15]. A novel FinFET based domino logic is presented in [16].…”
Section: Introductionmentioning
confidence: 99%
“…The sustained scaling of conventional bulk device requires innovations to circumvent the barriers of fundamental physics constraining the conventional MOSFET device structure. In the concern of battery-operated portable devices power consumption, chip density and operating frequency has increased because of advanced nanometer process technologies [1] - [3]. Even in the case of nonportable devices, power consumption is also very important because of the increased in packaging density and cooling costs as well as potential reliability problems.…”
Section: Introductionmentioning
confidence: 99%