Designing MoS2 channel properties for analog memory in neuromorphic applications

Abstract

In this paper, we introduce analog nonvolatile random access memory cells for neuromorphic computing. The analog memory cell [Formula: see text] channel is designed based on the simulation model including Fowler–Nordheim tunneling through a charge-trapping stack, trapping process, and transfer characteristics to describe a full write/read circle. 2D channel materials provide scaling to higher densities as well as preeminent modulation of the conductance by the accumulated space charge from the oxide trapping layer. In this paper, the main parameters affecting the distribution of memory states and their total number are considered. The dependence of memory state distribution on channel doping concentration and the number of layers is given. In addition, how the nonlinearity of memory state distribution can be overcome by variation of operating conditions and by applying pulse width modulation to the bottom gate voltage is also shown.

Energy‐Efficient Operation Conditions of MoS2‐Based Memristors

“…[1][2][3][4] This property allows memristors to function as nonvolatile analog memory elements with a multitude of memory states, making them a promising alternative to conventional binary memories such as flash memories or dynamic random-access memories (DRAMs). [5] Memristors have also been proposed for various applications in computing, such as neuromorphic computing and in-memory computing, due to their ability to perform data-intensive operations in a highly parallel and energy-efficient manner, as demonstrated in ref. [6].…”

Formation and Characterization of Three-Dimensional Tetrahedral MoS2 Thin Films by Chemical Vapor Deposition

“…MoS 2 has emerged as a prominent representative among 2D materials by subduing many intrinsic limitations of graphene (i.e., zero bandgap) . Because of its material and electronic properties, it has attracted attention in scientific applications, such as electronic, , optoelectronic, , catalytic, − biomedicine, and neuromorphic memristive applications, − and gas sensing . Moreover, due to their interesting properties like quantum confinement and thickness-dependent bandgap, i.e., changing from 1.3 for bulk (indirect bandgap) to 1.9 eV for single-layer (direct bandgap) MoS 2 , many research approaches have been developed to synthesize large-area 2D MoS 2 .…”