Designing few-layer graphene Schottky contact solar cells: Theoretical efficiency limits and parametric optimization

Abstract

We theoretically study the efficiency limits and performance characteristics of few-layer graphene–semiconductor solar cells (FGSCs) based on a Schottky contact device structure. We model and compare the power conversion efficiency (PCE) of various configurations by explicitly considering the non-Richardson thermionic emission across few-layer graphene/semiconductor Schottky heterostructures. The calculations reveal that ABA-stacked trilayer graphene–silicon solar cell exhibits a maximal conversion efficiency exceeding 26% due to a lower reversed saturation current when compared to that of the ABC-stacking configuration. The thermal coefficients of PCE for ABA and ABC stacking FGSCs are –0.061%/K and –0.048%/K, respectively. Our work offers insights into optimal designs of graphene-based solar cells, thus paving a route toward the design of high-performance FGSC for future nanoscale energy converters.

Concentrated thermionic solar cells using graphene as the collector: theoretical efficiency limit and design rules

“…τ inj is related to the out-of-plane velocity of electrons in graphene with nonconserving scattering strength. Here we consider a representative range from 1 ps to 1 ms, which is referenced to the values of graphene-semiconductor contact reported experimentally [46,[54][55][56]. A larger τ inj corresponds to the situation in which the contact resistance across the graphenevacuum interface is large [54].…”

A Simulation-Based Investigation of Cu_2ZnSnS_4 Solar Cells with Graphene as a Window Layer

“…The proposed structure encompasses three layers which are simulated via the SCAPS3309 tools. The electrical and optical parameters of the materials are shown in Table 1, which are obtained from the works of literature [9,[13][14][15]17,[30][31][32][33] for reasonable estimation.…”

SnCl4-Treated Ti3C2Tx MXene Nanosheets for Schottky Junction Solar Cells with Improved Performance

“…Silicon (Si)-based Schottky junction/heterojunction solar cells having exhibited the potential to deliver a competitive power conversion efficiency (PCE) to the traditional pn junction counterparts, but with a simpler fabrication process, e . g ., low-temperature solution processing, have aroused increasing interest in recent years. , To date, various materials including PEDOT:PSS, − carbon nanotubes (CNTs), − graphene, − and some metal oxides − have been examined to make the Schottky junction/heterojunction with Si wafers. For these devices, the electron/hole transport layers (E/HTLs) that extract and transfer free electrons/holes and meanwhile block the holes/electrons from Si play an indispensable role. − Developing effective and long-term stable E/HTL materials and the device fabrication processes suitable for Si-based Schottky junction/heterojunction solar cells has been a significant effort. − …”