Designing Crystallization to Tune the Performance of Phase-Change Memory: Rules of Hierarchical Melt and Coordinate Bond

Abstract

While alloy design has practically shown an efficient strategy to mediate two seemingly conflicted performances of writing speed and data retention in phase-change memory, the detailed kinetic pathway of alloy-tuned crystallization is still unclear. Here, we propose hierarchical melt and coordinate bond strategies to solve them, where the former stabilizes a medium-range crystal-like region and the latter provides a rule to stabilize amorphous. The Er0.52Sb2Te3 compound we designed achieves writing speed of 3.2ns and ten-year data retention of 161°C. We provide a direct atomic-level evidence that two neighbor Er atoms stabilize a medium-range crystal-like region, acting as a precursor to accelerate crystallization; meanwhile, the essential reason of stabilization originates from the formation of coordinate bonds by sharing lone-pair electrons of chalcogenide atoms with the empty d orbitals of Er atoms. The two rules pave the way for the development of storage-class memory with excellent comprehensive performance to achieve next revolutionary technology node.