2023
DOI: 10.1039/d2tc05068d
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Designing and controlling the Ni2+-activated (Zn, Mg)Al2O4 spinel solid-solution for phosphor-converted broadband near-infrared illumination

Abstract: Ni2+-activated Zn1−xMgxAl2O4 phosphors exhibit broadband NIR emission band of 1000–1600 nm and are utilized in the application of broadband pc-NIR LEDs.

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Cited by 31 publications
(15 citation statements)
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“…NIR phosphor-converted lightemitting diodes (NIR pc-LEDs) are gradually becoming the mainstream of a NIR light source due to their low cost, long life, and high luminous efficiency. 8,9 Cr 3+ has an electronic configuration of 3d 3 with an unparalleled broadband NIR emission property, which typically is affected by the crystal field environment and electron−phonon coupling. 10,11 So far, many Cr 3+ -doped NIR phosphors with oxide or fluoride-based matrices have been reported.…”
Section: Introductionmentioning
confidence: 99%
“…NIR phosphor-converted lightemitting diodes (NIR pc-LEDs) are gradually becoming the mainstream of a NIR light source due to their low cost, long life, and high luminous efficiency. 8,9 Cr 3+ has an electronic configuration of 3d 3 with an unparalleled broadband NIR emission property, which typically is affected by the crystal field environment and electron−phonon coupling. 10,11 So far, many Cr 3+ -doped NIR phosphors with oxide or fluoride-based matrices have been reported.…”
Section: Introductionmentioning
confidence: 99%
“…7 Ni 2+ is an ideal activator for NIR luminescent materials, and a Ni 2+ -doped phosphor has broadband emission characteristics that cover the NIR-II window with a half-maximum width (FWHM) as broad as 300 nm. 8,9 However, the quantum efficiencies of Ni 2+ -doped NIR luminescent materials are relatively low, examples include: BaTiO 3 (B6.2%), 10 CaTiO 3 (B4.3%), 11 MgTiO 3 (B3.1%), 10 SrTiO 3 (B6.5%), 10 LiGa 5 O 8 (B10%), 11 and Mg 2 SiO 4 (B1%), 12 which makes them less suitable for use as near-infrared light sources. One of the main reasons for the low luminescence efficiency of Ni 2+ -doped NIR materials is a charge imbalance caused by the substitution of the trivalent or tetravalent ions in the matrix materials by divalent Ni 2+ , resulting in electron defects, which deactivates the activator and negatively affects the luminescent properties of phosphors.…”
Section: Introductionmentioning
confidence: 99%
“…It has the advantages of excellent efficiency, high photoelectric conversion efficiency, and large optical output. A continuous laser-based emitter can be used to excite QD glass and achieve high-intensity lighting without the limiting overcurrent-related “efficiency dip” issue. A high conversion efficiency (radiated power ratio) can be obtained under a high driving current with a semiconductor laser light source. LD-based illumination technology is mature and has been used for infrared imaging and detection; , however, there have been few studies on the use of perovskite quantum dot glass for LD-based illumination.…”
Section: Introductionmentioning
confidence: 99%