Designable buried waveguides in sapphire by proton implantation

Abstract

Low-loss optical planar waveguides in YVO 4 produced by silicon ion implantation at low doses J. Appl. Phys. 94, 4708 (2003); 10.1063/1.1604965Monomode, nonleaky planar waveguides in a Nd 3+ -doped silicate glass produced by silicon ion implantation at low doses

Optically pumped planar waveguide lasers, Part I: Fundamentals and fabrication techniques

“…Proton implantation has also attracted interest for fabrication of waveguide lasers primarily for its potential to induce deeper damage profiles as a result of the larger depths that protons can penetrate in the substrate compared to higher-mass ions. Furthermore, for many materials the effect of proton implantation on the quality of the guiding region is less detrimental relative to that of higher mass ions, thereby extending the prospects for developing efficient waveguide devices [332].Although ion/proton implantation allows a great freedom of choice over the waveguide design, it suffers from the drawback that it creates defects in the guiding area, which are 72 responsible for an increase in propagation loss. To eliminate these defects the waveguides are subjected to high-temperature post-fabrication annealing, which however is undesirable in cases when their integration along with other functional components produced on the same chip in earlier fabrication steps is intended.…”

On-chip spectro-detection for fully integrated coherent beam combiners

“…While the implementation of optical waveguides on Sapphire substrate has been demonstrated [19], it is possible to consider to report a suitable SSPD setup on an integrated optics circuit designed for a multi telescope beam combination. Figure 2 shows a possible 4 telescope implementation.…”

Room-temperature continuous-wave operation of Ti:sapphire buried channel-waveguide lasers fabricated via proton implantation

“…Apart from scattering in the channels another reported source of loss for Ti:sapphire lasers is reabsorption of the lasing wavelength. 2,12 This effect can result from the presence of Ti 3+ -Ti 4+ pairs, which have increasing influence in crystals with high concentration of Ti 2 O 3 , as in our case, or from color centers created by the proton implantation process. A transmission spectrum recorded perpendicular to the damaged layer revealed the presence of F ͑E = 6.1 eV͒ and F + ͑E = 4.8 eV͒ color centers as previously identified in neutron-bombarded Al 2 O 3 .…”

“…1,2 This method has recently been proved capable of producing low-loss ͑ϳ0.7 dB/ cm͒ buried channel waveguides in undoped sapphire crystals without any postimplantation annealing. 2 Ti:sapphire is a widely used laser system with broad tunability ͑650-1100 nm͒, which makes it suitable for the development of short pulse and broadly tunable lasers, 3 with potential applications in areas as diverse as biomedical imaging, spectroscopy, sensing, and microscopy. Due to its low peak emission cross section and the short fluorescence lifetime, Ti:sapphire lasers require high pump-power densities to achieve efficient cw lasing.…”

“…Light guidance in the vertical direction was achieved by fabricating one upper and two lower barriers inside the crystal, with proton energies of 0. 2 . By varying the angle of incidence instead of the ion energy, larger radial dispersion of the proton beam and in turn production of optical barriers with a larger width in the normal direction was achieved.…”