Design tradeoffs between traditional hexagonal and emerging cubic In_XGa_(1–X)N/GaN-based green light-emitting diodes

Abstract

Here, we report on the design tradeoffs between traditional hexagonal and emerging cubic InXGa(1−X)N/GaN-based green (520nm≤λ≤550nm) light-emitting diodes with special emphasis on the electron blocking layer, number of quantum wells, and thicknesses of quantum wells and barriers. We identified three crucial design rules for cubic green light-emitting diodes: (1) no need for an electron blocking layer; (2) use of a wide quantum well; and (3) choice of thin quantum barriers in multi-quantum well light-emitting diode designs. These design rules increase the internal quantum efficiency of cubic green light-emitting diodes by ∼30.5% under 100A/cm2 injection with respect to traditional designs. Overall, the design rules of cubic light-emitting diodes and their differentiating nature from the traditional, hexagonal ones are crucial for the advent of next-generation cubic light-emitting diodes.

Effect of Asymmetric InAlGaN/GaN Superlattice Barrier Structure on the Optoelectronic Performance of GaN-Based Green Laser Diode

“…To enhance the optoelectronic performance of LD, researchers have made a lot of efforts in the direction of alleviating the strain accumulation in the active region and improving crystal quality. The commonly used methods include: growing a stress compensation layer in the active region before MQWs; 5,6 using ternary or quaternary compounds with the similarity to the lattice constants of InGaN as quantum barrier layer materials; 7,8 growing MQWs in the nonpolar or semipolar surfaces; 9 and doping GaN quantum barrier layer with silicon, etc. 10 These methods typically use a low indium content waveguide layer for good optical confinement.…”