Design, test and characteristics of 10 kV IGCTs

Bernet, Steffen; Carroll, E.; Streit, P.; Apeldoorn, O.; Steimer, P.K.; Tschirley, S.

doi:10.1109/ias.2003.1257665

Cited by 18 publications

(8 citation statements)

References 5 publications

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“…2) It will be easy to apply the method to devices with similar structures, such as those presented in latest IGBT generations, like field stop [20] and CSTBT [21]), or thyristor-type devices like IGCT [22].…”

Section: Discussionmentioning

confidence: 99%

A FEM punch-through IGBT model using an efficient parameter extraction method

Chibante

Araújo

Carvalho

2005

31st Annual Conference of IEEE Industrial Electronics Society, 2005. IECON 2005.

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-A Finite Element physics-based punch-throughIGBT model is presented. The model's core is based on solving the Ambipolar Diffusion Equation (ADE) trough a variational formulation, resulting in a system of ODEs. The approach enables an easy implementation into a standard circuit simulator SPICE by means of an electrical analogy with the resulting system of ODEs, solved as a set of current controlled RC nets that describes charge carrier distribution in low-doped zone. The issue of parameter extraction for physics-based IGBT models is also addressed. An optimisation-based algorithm enabling an efficient parameter extraction method for IGBT model is discussed. Model is validated comparing experimental and simulated results.

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Section: Discussionmentioning

confidence: 99%

A FEM punch-through IGBT model using an efficient parameter extraction method

Chibante

Araújo

Carvalho

2005

31st Annual Conference of IEEE Industrial Electronics Society, 2005. IECON 2005.

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“…An attractive approach for medium converter powers is the integration of IGCT and diode on one wafer. Based on the characterizations of asymmetric 10-kV-IGCTs [2], [3], a series of reverse conducting 10-kVIGCTs with integrated fast 10-kV-diodes was manufactured. The 10-kV-diode is located in the centre of the wafer using the same base material as for the IGCTs.…”

Section: Design Of 10-kv-rc-igctsmentioning

confidence: 99%

“…Increasing the converter output voltage can be achieved by using a series connection of IGCTs in each switch position or by the use of a device with a higher blocking voltage V DRM . It is shown in [2], [3] that the usage of a single 10-kV-IGCT per switch position enables a reduction of the component count in the converter's power part of 41 − 71% and an increase of the reliability by 12 − 56% compared to a series connection of two 4.5-kV-or 5.5-kV-IGCTs/Diodes. The integration of one 10-kV-IGCT and one fast 10-kVdiode in a single press pack housing is a very attractive solution for converters with power ratings of S C ≤ 5−6 MVA since the expense for the mechanical construction and cooling can be substantially reduced.…”

Section: Introductionmentioning

confidence: 99%

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Design and characteristics of reverse conducting 10-kV-IGCTs

Tschirley

Bernet²,

Streit

2008

2008 IEEE Power Electronics Specialists Conference

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The integration of a 10-kV-IGCT and a fast diode in one press pack is a very attractive solution for Medium Voltage Converters in a voltage range of 6 kV − 7.2 kV if the converter power rating does not exceed about 5 − 6 MVA. This paper describes the design and characterization of the world first reverse conducting 68 mm 10-kV-IGCTs. On-state-, blocking and switching behaviour of different IGCT and diode samples are investigated experimentally. The experimental results clearly show, that 10-kV-RC-IGCTs are an attractive power semiconductor for 6 − 7.2 kV Medium Voltage Converters.

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“…It is shown that the use of 10kV IGCTs enables a reduction of the total number of the main power components by 71 -41% compared to a series connection of 4.5kV or 5.5kV IGCT devices. Design, test, and characteristics of 10kV IGCTs have been described in [21]. 10kV IGCTs could be an attractive solution for wind turbines applications, and MV drives of high power ratings.…”

Section: Introductionmentioning

confidence: 99%

Flyback-type di/dt snubber for 10kV IGCT in MV wind turbines

Lee

Suh

2014

2014 IEEE Energy Conversion Congress and Exposition (ECCE)

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Converters employing IGCTs usually require di/dt snubber and over voltage protection (OVP) circuit for the protection of IGCTs. In these IGCT-based converters, loss of conventional di/dt snubber and OVP clamp circuit is relatively high. To reduce this loss of conventional di/dt snubber and OVP clamp circuit, this paper proposes a flyback-type di/dt snubber for IGCT-based converters. This flyback-type di/dt snubber simply consists of a flyback-type transformer and a clamp diode. The proposed circuit reduces loss and simplifies conventional di/dt snubber by adopting the flyback-type transformer. The loss analysis of conventional di/dt snubber and OVP clamp circuit is performed for the neutral point clamped (NPC) 3-level back-to-back type voltage source converter (VSC) supplied from grid voltage of 6.9kV. At maximum, the proposed flyback-type di/dt snubber can save the loss (34kW, 0.49%) of conventional snubber circuit in a 7MW back-to-back 3L-NPC VSCs. The proposed snubber has a fewer number of components and improved efficiency.

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Design, test and characteristics of 10 kV IGCTs

Cited by 18 publications

References 5 publications

A FEM punch-through IGBT model using an efficient parameter extraction method

A FEM punch-through IGBT model using an efficient parameter extraction method

Design and characteristics of reverse conducting 10-kV-IGCTs

Flyback-type di/dt snubber for 10kV IGCT in MV wind turbines

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