Design technology co-optimization assessment for directed self-assembly-based lithography: design for directed self-assembly or directed self-assembly for design?

Lai, Kafai; Liu, Chi‐Chun; Tsai, Hsinyu; Xu, Yuheng; Chi, Cheng; Raghunathan, Ananthan; Dhagat, Parul; Hu, Lin; Park, Oseo; Jung, Sunggon; Cho, Wooyong; Morillo, Jaime; Pitera, Jed W.; Schmidt, Kristin; Guillorn, Mike; Brink, Markus; Sanders, Daniel P.; Felix, Nelson; Bailey, Todd; Colburn, Matthew

doi:10.1117/1.jmm.16.1.013502

Cited by 9 publications

(2 citation statements)

References 16 publications

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“…The integration of BCP-based nanopatterning into FinFET fabrication requires the co-optimization of the process, design, and layout. Some simulation work has been carried out to find optimal designs for the guide pattern mask, fin, and via structures [111,112]. To date, DSA has demonstrated good capabilities in dense line/space patterning.…”

Section: Finfet Fabricationmentioning

confidence: 99%

Directed self-assembly of block copolymers for sub-10 nm fabrication

Chen

Xiong

2020

Int. J. Extrem. Manuf.

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Directed self-assembly (DSA) emerges as one of the most promising new patterning techniques for single digit miniaturization and next generation lithography. DSA achieves high-resolution patterning by molecular assembly that circumvents the diffraction limit of conventional photolithography. Recently, the International Roadmap for Devices and Systems listed DSA as one of the advanced lithography techniques for the fabrication of 3–5 nm technology node devices. DSA can be combined with other lithography techniques, such as extreme ultra violet (EUV) and 193 nm immersion (193i), to further enhance the patterning resolution and the device density. So far, DSA has demonstrated its superior ability for the fabrication of nanoscale devices, such as fin field effect transistor and bit pattern media, offering a variety of configurations for high-density integration and low-cost manufacturing. Over 1 T in−2 device density can be achieved either by direct templating or coupled with nanoimprinting to improve the throughput. The development of high χ block copolymer further enhances the patterning resolution of DSA. In addition to its superiority in high-resolution patterning, the implementation of DSA on a 300 mm pivot line fully demonstrates its potential for large-scale, high-throughput, and cost-effective manufacturing in industrial environment.

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Section: Finfet Fabricationmentioning

confidence: 99%

Directed self-assembly of block copolymers for sub-10 nm fabrication

Chen

Xiong

2020

Int. J. Extrem. Manuf.

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“…The downscaling of pattern dimensions in microelectronics has long passed the limits of 193 nm immersion lithography. Design-technology co-optimization (DTCO) allowed manufacturers to keep the pace in pitch scaling for the past decade, waiting for extreme-UV (EUV) lithography to become high-volume production-ready. The steady progress brought the pitches of the densest structures in the current most advanced CMOS nodes down to around 30 nm.…”

Section: Introductionmentioning

confidence: 99%

Dry-Etching Processes for High-Aspect-Ratio Features with Sub-10 nm Resolution High-χ Block Copolymers

Pound-Lana

Bézard

Petit-Etienne

et al. 2021

ACS Appl. Mater. Interfaces

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Directed self-assembly of block copolymers (BCP) is a very attractive technique for the realization of functional nanostructures at high resolution. In this work, we developed full dry-etching strategies for BCP nanolithography using an 18-nm pitch lamellar silicon-containing block copolymer. Both an oxidizing Ar/O2 plasma and a non-oxidizing H2/N2 plasma are used to remove the topcoat material of our BCP stack and reveal the perpendicular lamellae. Under Ar/O2 plasma, an interfacial layer stops the etch process at the top-coat/BCP interface, which provides an etch-stop but also requires an additional CF4-based breakthrough plasma for further etching. This interfacial layer is not present in H2/N2. Increasing the H2/N2 ratio leads to more profound modifications of the silicon-containing lamellas, for which a chemistry in He/N2/O2 rather than Ar/O2 plasma produces a smoother and more regular lithographic mask. Finally, these features are successfully transferred into silicon, silicon-on-insulator and silicon nitride substrates. This work highlights the performance of a silicon-containing block-copolymer at 18 nm pitch to pattern relevant hardmask materials for various applications, including microelectronics.

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Using block copolymers as infiltration sites for development of future nanoelectronic devices: Achievements, barriers, and opportunities

Cummins

Morris

2018

Microelectronic Engineering

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Design technology co-optimization assessment for directed self-assembly-based lithography: design for directed self-assembly or directed self-assembly for design?

Cited by 9 publications

References 16 publications

Directed self-assembly of block copolymers for sub-10 nm fabrication

Directed self-assembly of block copolymers for sub-10 nm fabrication

Dry-Etching Processes for High-Aspect-Ratio Features with Sub-10 nm Resolution High-χ Block Copolymers

Using block copolymers as infiltration sites for development of future nanoelectronic devices: Achievements, barriers, and opportunities

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