Design Techniques of Sub-ns Level Shifters With Ultrahigh <i>dV/dt</i> Immunity for Various Wide-Bandgap Applications

Cao, Jianwen; Zhou, Zekun; Wang, Zhuo; Tang, He; Zhang, Chao

doi:10.1109/tpel.2021.3061715

Cited by 9 publications

(9 citation statements)

References 21 publications

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“…Active gate drivers mitigate the oscillation by actively controlling the gate voltage to regulate the slew rate of voltage/current. They employ a closed-loop to fully exploit the potential of WBG devices (Shahverdi et al, 2013;Dymond et al, 2018;Cao et al, 2021). The active gate driver proposed in Nayak and Hatua (2017) utilized stray inductance and capacitance to achieve quasi zero switching leading to reduced switching losses.…”

Section: Active Gate Driversmentioning

confidence: 99%

Performance Improvement Strategies for Discrete Wide Bandgap Devices: A Systematic Review

Tahir

2021

Front. Energy Res.

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Wide bandgap (WBG) devices are becoming increasingly popular due to their excellent material properties. WBG devices are commercially available in discrete and module packages. Many studies have investigated the design, structure and benefits of module packages. However, a comprehensive and in-depth overview of the discrete package is lacking. Discrete package has the advantages of flexibility, scalability and reduced cost; however, challenges of severe switching oscillations and limited current capacity are associated with it. This review encompasses the switching oscillations and limited current capacity issues of discrete devices. Switching oscillations are categorized in terms of voltage. The underlying oscillation mechanisms are explored in detail. For the current imbalance, the types, root causes and adverse effects in parallel-connected discrete devices application are reviewed. Besides, the most recent techniques to extract stray parameters are also explored. Finally, state-of-the-art methods to mitigate the switching oscillations and the current imbalance are summarized and evaluated. The performance improvement strategies discussed in this paper can assist researchers to better use the discrete package and can stimulate them to come up with new solutions.

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Section: Active Gate Driversmentioning

confidence: 99%

Performance Improvement Strategies for Discrete Wide Bandgap Devices: A Systematic Review

Tahir

2021

Front. Energy Res.

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“…Therefore, as the critical sub-block of gate drivers, the level shifter has a high dV/dtimmunity requirement in wide-bandgap applications. The existing HV level shifters use many design techniques to improve dV/dt immunity [1][2][3][4]. These level shifters' dV/dt noise immunity has been significantly enhanced, about hundreds of V/ns.…”

mentioning

confidence: 99%

“…The HV floating power supply rail rises synchronously, which is the positive dV/dt noise; the other is that the HV floating power supply rail falls synchronously, which is the negative dV/dtnoise. Therefore, only the circuit connected with both HV and LV regions needs to be considered when the level shifter is disturbed bydV/dt noises, as described in [4]. For the HV floating level shifter, HV and LV regions have the same power supply rail voltage [4].…”

mentioning

confidence: 99%

“…Therefore, only the circuit connected with both HV and LV regions needs to be considered when the level shifter is disturbed bydV/dt noises, as described in [4]. For the HV floating level shifter, HV and LV regions have the same power supply rail voltage [4]. VDDH-VSSH is equal to VDDL-VSSL, and the LV power supply rail (VDDL-VSSL) is fixed.…”

mentioning

confidence: 99%

“…Table 1 shows the comparison of HV level shifters. In [1] and [4], the large positive dV/dt immunity and infinite negativedV/dt immunity are achieved under tens of voltages supply voltage. As the power supply voltage increases, dV/dt noise interference also gradually increases.…”

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confidence: 99%

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The High-Voltage Level Shifter with dV/dt noises Shielding

Cao

Zhou

Zhang

2022

Preprint

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This paper proposes a HV (high-voltage) level shifter to shield the dV/dt noise. When there is the dV/dt noises, the proposed level shifter’s output is locked by the dV/dt noise shielding circuit. So, the proposed level shifter has infinite dV/dt immunity, which is not affected by the supply voltage, and processes. In the 0.5µm BCD process, the proposed level shifter is simulated, realizing the ±250V/ns dV/dt noises shielding function and less than 1.5ns delay time under the 400V HV power supply.

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The integrated fast short-circuit protection technique with soft turn-off for SiC MOSFET

Cao

Zhou²,

Shi³

et al. 2022

Microelectronics Reliability

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Design Techniques of Sub-ns Level Shifters With Ultrahigh dV/dt Immunity for Various Wide-Bandgap Applications

Cited by 9 publications

References 21 publications

Performance Improvement Strategies for Discrete Wide Bandgap Devices: A Systematic Review

Performance Improvement Strategies for Discrete Wide Bandgap Devices: A Systematic Review

The High-Voltage Level Shifter with dV/dt noises Shielding

The integrated fast short-circuit protection technique with soft turn-off for SiC MOSFET

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