“…COM-based low- E g nonfullerene acceptors (NFAs) have emerged as efficient absorbers for bulk heterojunction (BHJ) film-based NIR OPDs. − They possess the beneficial optical and electrical properties, such as strong and tunable NIR light absorption characteristics and efficient charge transport capability as an electron acceptor. − Y6 and Y6BO, widely used NIR-absorbing NFAs, exhibited strong NIR absorption with a narrow E g (Y6: 1.31 eV and Y6BO: 1.36 eV). ,− Unfortunately, NIR OPDs comprising Y6 and Y6BO showed a very low response to a longer NIR region (>950 nm) because their absorbance abruptly decreases over approximately 860 nm (cf. λ max,Y6 : 858 nm and λ max,Y6BO : 824 nm). ,,, Thereby, much research on the development of NFAs having an effective photoresponse at >950 nm has been conducted using Y6-framework. ,,− Among them, DO-4F is recognized as a promising NIR-absorbing NFA due to the high NIR absorbance, low dark current density ( J D ), high specific detectivity ( D *), and responsivity ( R ) of DO-4F-based OPDs. However, the absorption spectrum still cannot exceed 1000 nm, limiting long wavelength NIR OPD applications.…”