2017
DOI: 10.1002/anie.201610944
|View full text |Cite
|
Sign up to set email alerts
|

Design, Synthesis, and Photovoltaic Characterization of a Small Molecular Acceptor with an Ultra‐Narrow Band Gap

Abstract: The design of narrow band gap (NBG) donors or acceptors and their application in organic solar cells (OSCs) are of great importance in the conversion of solar photons to electrons. Limited by the inevitable energy loss from the optical band gap of the photovoltaic material to the open-circuit voltage of the OSC device, the improvement of the power conversion efficiency (PCE) of NBG-based OSCs faces great challenges. A novel acceptor-donor-acceptor structured non-fullerene acceptor is reported with an ultra-nar… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

10
564
0
2

Year Published

2018
2018
2022
2022

Publication Types

Select...
5
3

Relationship

1
7

Authors

Journals

citations
Cited by 747 publications
(587 citation statements)
references
References 44 publications
10
564
0
2
Order By: Relevance
“…[36,37] In the various types of NF acceptors, the materials with a so-called A-D-A [38] structure, in which electron-rich central unit is endcapped by two electron-deficient segments and hence ICT can be formed, has exhibited promising photovoltaic properties. [40,41] Especially, introducing fluorine atoms is an efficient way to modulate the ICT effect. Its molecular energy levels including LUMO and highest-occupied-molecular-orbital (HOMO) levels could be elevated or depressed by introducing electron pushing or withdrawing groups into its end-capping segments, by which the V OC of the OSCs could be modulated.…”
mentioning
confidence: 99%
See 1 more Smart Citation
“…[36,37] In the various types of NF acceptors, the materials with a so-called A-D-A [38] structure, in which electron-rich central unit is endcapped by two electron-deficient segments and hence ICT can be formed, has exhibited promising photovoltaic properties. [40,41] Especially, introducing fluorine atoms is an efficient way to modulate the ICT effect. Its molecular energy levels including LUMO and highest-occupied-molecular-orbital (HOMO) levels could be elevated or depressed by introducing electron pushing or withdrawing groups into its end-capping segments, by which the V OC of the OSCs could be modulated.…”
mentioning
confidence: 99%
“…[22,[33][34][35] In order to realize broad light absorption and suitable molecular energy levels, the conjugated components with the aforementioned groups are often linked with electron-rich building blocks to form intramolecular charge transfer (ICT) effect. [40,41] Especially, introducing fluorine atoms is an efficient way to modulate the ICT effect. For example, 3,9-bis (2-methylene-(3-(1,1-dicyanomethylene)in-danone)-5,5,11,11-tetrakis(4-hexylphenyl)-dithieno[2,3-d:2′,3′-d′]-s-indaceno[1,2-b:5,6-b′]dithiophene (ITIC), [39] a well-known A-D-A NF acceptor, has the rigid center donor unit IDTT which can restrict molecular planarity, aggregation, and large phase separation in BHJ blend films.…”
mentioning
confidence: 99%
“…[30,[39][40][41][42] Zhan and co-workers [43] and Jen and co-workers [44] have reported a fused-ring thiophenethieno[3,2-b]thiophene-thiophene-based hexacyclic low-bandgap NFA (named IHIC or 4TIC, 1.38 eV), exhibiting a PCE of 9.77% with an relative high visible transmittance. Hou and coworkers [45] have demonstrated an ultranarrow-bandgap NFA (IEICO-4F, 1.24 eV) through utilizing a spacer (alkoxy thiophene) to enhance the ICT effect and electron delocalization, indicating a PCE of 10.9% within a ternary OSC. Designing the narrow bandgap acceptors with NIR absorption matching with mid-bandgap donors could be an ideal case for further improving the PCEs of OSCs.…”
mentioning
confidence: 99%
“…[38] Guided by this predictive principle, several methods have been developed to broaden the absorption spectra of NFAs, such as extending the conjugation and enhancing the ICT effect. Hou and coworkers [45] have demonstrated an ultranarrow-bandgap NFA (IEICO-4F, 1.24 eV) through utilizing a spacer (alkoxy thiophene) to enhance the ICT effect and electron delocalization, indicating a PCE of 10.9% within a ternary OSC. Hou and coworkers [45] have demonstrated an ultranarrow-bandgap NFA (IEICO-4F, 1.24 eV) through utilizing a spacer (alkoxy thiophene) to enhance the ICT effect and electron delocalization, indicating a PCE of 10.9% within a ternary OSC.…”
mentioning
confidence: 99%
“…[36][37][38] Recent developments in NFAs offer a wider choice of acceptor materials for ternary devices. [39][40][41][42][43][44][45] In terms of ternary blend incorporating two NFAs, impressive progresses have been also obtained. [21,22] Different ternary blends containing one NFA paired with two donors or one donor/one fullerene derivative exhibited high PCEs over 12%.…”
mentioning
confidence: 99%