Design strategies to increase the brightness of gain guided tapered lasers

Borruel, L.; Odriozola, H.; Tijero, J. M. G.; Esquivias, I.; Sujecki, S.; Larkins, E.C.

doi:10.1007/s11082-008-9187-8

Cited by 23 publications

(10 citation statements)

References 10 publications

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“…The evolution of M 2 and the astigmatism confirms that much higher output powers with similar beam quality are attainable with longer devices. Similar trend has been observed in simulations [13] and experiments of tapered laser. , and a geometry otherwise identical to the geometry of the reference SOA.…”

Section: Effects Of the Geometry On The Device Performancesupporting

confidence: 89%

“…At higher current, in each iteration cycle the electrical solution increases the internal temperature yielding a non-convergent loop. The increases of M 2 and the astigmatism for increasing injected current, commonly observed in tapered lasers [8,13], are also evidenced here. In thermal conditions there is an improvement of M 2 , which will be commented later, and an increase of the astigmatism.…”

Section: Simulation Of the Reference Soasupporting

confidence: 77%

“…The simulation tool has been slightly modified in order to consider a single pass amplifier instead of a resonant cavity. The tapered laser model has been previously described in [8,9], and applied to different types of tapered lasers [11][12][13][14][15] where it has demonstrated predictive capabilities. Therefore, only basic features are described here.…”

Section: Simulation Model and Device Parametersmentioning

confidence: 99%

“…The role of carrier lensing and thermal lensing in the beam degradation of tapered lasers has been previously analyzed by means of simulations in comparison with experimental results [13,15]. An improvement of M 2 in CW conditions in comparison with pulsed conditions was reported experimentally in [15].…”

Section: Simulation Of the Reference Soamentioning

confidence: 99%

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Simulation and geometrical design of multi-section tapered semiconductor optical amplifiers at 1.57 μm

et al. 2014

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Fully integrated semiconductor master-oscillator power-amplifiers (MOPA) with a tapered power amplifier are attractive sources for applications requiring high brightness. The geometrical design of the tapered amplifier is crucial to achieve the required power and beam quality. In this work we investigate by numerical simulation the role of the geometrical design in the beam quality and in the maximum achievable power. The simulations were performed with a Quasi-3D model which solves the complete steady-state semiconductor and thermal equations combined with a beam propagation method. The results indicate that large devices with wide taper angles produce higher power with better beam quality than smaller area designs, but at expenses of a higher injection current and lower conversion efficiency.

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Section: Effects Of the Geometry On The Device Performancesupporting

confidence: 89%

Section: Simulation Of the Reference Soasupporting

confidence: 77%

Section: Simulation Model and Device Parametersmentioning

confidence: 99%

Section: Simulation Of the Reference Soamentioning

confidence: 99%

See 2 more Smart Citations

Simulation and geometrical design of multi-section tapered semiconductor optical amplifiers at 1.57 μm

et al. 2014

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“…Several solutions have been developed in order to improve the spatial beam quality of high-brightness laser diodes. This will result in a dramatically reduced characteristic temperature (T 0 ) for the conventional quantum well tapered laser [5][6][7][8], which will further lead to a higher threshold current and worse beam quality. For the tapered diode lasers, the brightness is approximately proportional to the output power divided by the beam quality factor M 2 .…”

mentioning

confidence: 99%