“…Moreover, the FF decreases gradually from 84.50 % to 57.10 % for the higher N t , as shown in Fig. 5 d. According to previous reports [ 48 , 49 ], an adjustment in the N t usually modifies the defects, and mainly for higher N t , it reduces the τ n,p (i.e., charge carriers lifetime), and L n and L p (i.e., diffusion lengths), which are highly responsible for surface/interface recombinations, reducing the FPSC efficiency. Hence, it is evident that the lesser N t (i.e., reduced defects) and appropriate absorber thickness (to achieve higher photons) are the keys to attaining the maximum device efficiency.…”