Design, preparation and performance of Cu(In, Ga)(S, Se)&lt;inf&gt;2&lt;/inf&gt;/Zn(O, S)/ZnO:Al solar cells

Gerhardt, Paul D.; Steigert, Alexander; Stober, Frederick; Hergert, F.; Zweigart, S.; Lux‐Steiner, Martha Ch.

doi:10.1109/pvsc.2013.6744279

Cited by 6 publications

(4 citation statements)

References 5 publications

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“…In addition, no effects due to band misalignment in either direction were found for sputtered Zn(O,S) buffers with SSO within a very broad window, between approximately 15 30) and 40%. 31) 3) Beneficial interface defect distribution: A disadvantageous charged defect distribution might be present at the absorber=Zn(O,S) interface, leading to a high recombination rate. An intermediate thin ALD-ZnS layer could lead to a different energetic distribution of interface states, especially in their charged state after light soaking.…”

Section: Resultsmentioning

confidence: 99%

Interface engineering of Cu(In,Ga)Se₂and atomic layer deposited Zn(O,S) heterojunctions

Schmidt

Merdes

Steigert

et al. 2017

Jpn. J. Appl. Phys.

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Atomic layer deposition of Zn(O,S) is an attractive dry and Cd-free process for the preparation of buffer layers for chalcopyrite solar modules. As we previously reported, excellent cell and module efficiencies were achieved using absorbers from industrial pilot production. These absorbers were grown using a selenization/sulfurization process. In this contribution we report on the interface engineering required to adapt the process to sulfur-free multi source evaporated absorbers. Different approaches to a local sulfur enrichment at the heterojunction have been studied by using surface analysis (XPS) and scanning transmission electron microscopy. We correlate the microstructure and element distribution at the interface with device properties obtained by electronic characterization. The optimized completely dry process yields cell efficiencies >16% and 30 × 30 cm2 minimodule efficiencies of up to 13.9% on industrial substrates. Any degradation observed in the dry heat stress test is fully reversible after light soaking.

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Section: Resultsmentioning

confidence: 99%

Interface engineering of Cu(In,Ga)Se₂and atomic layer deposited Zn(O,S) heterojunctions

Schmidt

Merdes

Steigert

et al. 2017

Jpn. J. Appl. Phys.

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“…Testing on absorbers from the Bosch Solar CISTech pilot line achieved efficiencies which were comparable with those of CdS buffered reference cells . Small area monolithically integrated modules were a first step towards scaling‐up . Using lab‐scale absorbers, we have been able to demonstrate the potential for high efficiency .…”

Section: Introductionmentioning

confidence: 92%

Sputtered Zn(O,S) buffer layers for CIGS solar modules—from lab to pilot production

Wachau

Schulte

Ágoston

et al. 2017

Progress in Photovoltaics

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Sputtering of Zn(O,S) from ZnO/ZnS compound targets has been proven to be a promising buffer layer process for Cd-free CIGS modules due to easy in-line integration, low cost and high efficiency on lab scale. In this publication, we report on successful upscaling of the lab process to pilot production. A record aperture efficiency of 13.2% has been reached on a 50 × 120 cm 2 sized module. Neither a non-doped ZnO layer nor additional annealing steps are required. Moreover, this very reproducible process yields a standard deviation comparable with that of the CdS base line. In contrast to lab experiments, strong performance gain after light soaking has been observed. The light-soak-induced power increase depends on the preparation of the window layer. Accelerated aging tests show high stability of module power. This is confirmed by outdoor testing for 20 months.

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“…The energy band structure between Zn(O,S) and Cu(In,Ga) Se 2 has been given by Kieven et al [19], while the tuning of sulfur content [20][21][22][23] in Zn(O,S) thin films is shown to have a significant influence on the electrical properties of such films as well as the conduction band offset (CBO) at the Zn(O,S)/ Cu(In,Ga)Se 2 interface. In order to obtain a higher open-circuit voltage in the solar cell, a higher Ga content is required in the Cu(In,Ga)Se 2 films, which are corresponding to a higher sulfur content in Zn(O,S) films.…”

Section: Introductionmentioning

confidence: 99%

Artificial twin-layer configurations of Zn(O,S) films by radio frequency sputtering in all dry processed eco-friendly Cu(In,Ga)Se₂ solar cells

Liu

Li³

et al. 2018

J. Phys. D: Appl. Phys.

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Cu(In,Ga)Se2 thin film solar cells are of great interest for research and industrial applications with their high conversion efficiencies, long-term stability and significant lifetimes. Such a solar cell of a p-n junction consists of p-type Cu(In,Ga)Se2 films as a light absorber and n-type CdS as a buffer layer, which often emerges with intrinsic ZnO. Aimed at eco-friendly fabrication protocols, a large number of strategies have been investigated to fabricate a Cd-free n-type buffer layer such as Zn(O,S) in Cu(In,Ga)Se2 solar cells. Also, if the Zn(O,S) films are prepared by coevaporation or sputtering, it will offer high compatibility with the preferred mass production. Here, we propose and optimize a dry method for Zn(O,S) deposition in a radio frequency sputtering. In particular, the strategy for the twin-layer configurations of Zn(O,S) films not only greatly improve their electrical conductance and suppress charge carrier recombination, but also avoid degradation of the Zn(O,S)/Cu(In,Ga)Se2 interfaces. Indeed, the high quality of such twin Zn(O,S) layers have been reflected in the similar conversion efficiencies of the complete solar cells as well as the large short-circuit current density, which exceeds the CdS reference device. In addition, Zn(O,S) twin layers have reduced the production time and materials by replacing the CdS/i-ZnO layers, which removes two fabrication steps in the multilayered thin film solar cells. Furthermore, the device physics for such improvements have been fully unveiled with both experimental current–voltage and capacitance–voltage spectroscopies and device simulations via wxAMPS program. Finally, the proposed twin-layer Zn(O,S)/Cu(In,Ga)Se2 interfaces account for the broadening of the depletion region of photogenerated charge carriers, which greatly suppress the carrier recombination at the space charge region, and eventually lead to the more efficient collection of charge carriers at both electrodes.

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Design, preparation and performance of Cu(In, Ga)(S, Se)<inf>2</inf>/Zn(O, S)/ZnO:Al solar cells

Cited by 6 publications

References 5 publications

Interface engineering of Cu(In,Ga)Se₂and atomic layer deposited Zn(O,S) heterojunctions

Interface engineering of Cu(In,Ga)Se₂and atomic layer deposited Zn(O,S) heterojunctions

Sputtered Zn(O,S) buffer layers for CIGS solar modules—from lab to pilot production

Artificial twin-layer configurations of Zn(O,S) films by radio frequency sputtering in all dry processed eco-friendly Cu(In,Ga)Se₂ solar cells

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Design, preparation and performance of Cu(In, Ga)(S, Se)<inf>2</inf>/Zn(O, S)/ZnO:Al solar cells

Cited by 6 publications

References 5 publications

Interface engineering of Cu(In,Ga)Se2and atomic layer deposited Zn(O,S) heterojunctions

Interface engineering of Cu(In,Ga)Se2and atomic layer deposited Zn(O,S) heterojunctions

Sputtered Zn(O,S) buffer layers for CIGS solar modules—from lab to pilot production

Artificial twin-layer configurations of Zn(O,S) films by radio frequency sputtering in all dry processed eco-friendly Cu(In,Ga)Se2 solar cells

Contact Info

Product

Resources

About

Interface engineering of Cu(In,Ga)Se₂and atomic layer deposited Zn(O,S) heterojunctions

Interface engineering of Cu(In,Ga)Se₂and atomic layer deposited Zn(O,S) heterojunctions

Artificial twin-layer configurations of Zn(O,S) films by radio frequency sputtering in all dry processed eco-friendly Cu(In,Ga)Se₂ solar cells