Design, Preparation and Characterization of Mid-infrared Low-emissivity Film

Abstract

The rapid development of infrared detection technology requires that military targets have mid-infrared stealth performance. In this paper, a mid-infrared low-emissivity film based on one-dimensional photonic crystal structure was designed and prepared. The results showed that its reflectivity properties are improved and total thickness is reduced by optimizing the construction parameters. The thickness and refractive index of the prepared Ge film and ZnSe film were tested using IR ellipsometer. After the test results were brought into the designed structure, mid-infrared low-emissivity films with emissivity of 0.032, 0.068, 0.146, 0.203 and 0.366 were prepared by vacuum evaporation. The infrared reflectivity of the mid-infrared low-emissivity films was tested using Fourier spectrometer, and the test results are in good agreement with calculated results.