Design parameters of frequency response of GaAs—(Ga,Al)As double heterostructure LED's for optical communications

Ikeda, Kenji; Horiuchi, S.; Tanaka, Toshio; Susaki, W.

doi:10.1109/t-ed.1977.18869

Cited by 87 publications

(13 citation statements)

References 15 publications

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“…The design parameters of frequency response for double heterostructure LED's is described in [3]. The easiest approach is to assume a bi-molecular recombination mechanism where the cut-off frequency is given by…”

Section: Introductionmentioning

confidence: 99%

Fast LEDs for polymer optical fiber communication at 650nm

et al. 2005

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Data rates above 250 MBit/s via polymer optical fiber (POF) require specially designed light emitting diode (LED) chips. Because of the absorption minimum of the POF, the red wavelength region around 650 nm is of special interest. LED chips in this region comprise active regions out of the AlGaInP material system. To achieve low rise and fall times in the optical output, the current density has to be increased to levels about 400A/cm². Hence the chip design needs ways to confine the current injection to a region significantly smaller than the chip itself.Conventional methods use epitaxially grown layers to ensure the lateral current spreading over the active region. But to confine the current to this region, the current spreading has to be eliminated locally. Typically, this is achieved by ion-implantation, mesa etching or selective oxidation of an AlGaAs layer of high Al-content.In this paper we present a new, planar, and very cost effective chip design for data rates around 250 MBit/s. No current spreading layer is included in the epitaxial growth, but is supplied during chip process using a transparent conductive oxide. Optical power around 2 mW at 20 mA without epoxy encapsulation, and rise and fall times around 2.5 ns have been reached.

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Section: Introductionmentioning

confidence: 99%

Fast LEDs for polymer optical fiber communication at 650nm

et al. 2005

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“…From these results, we have an estimation of the ratio of the radiative recombination lifetime and the nonradiative recombination lifetime. From the estimation of the radiative minority-carrier lifetime from the B-coefficient relation 11 and the hole concentration, we obtain a much shorter nonradiative recombination lifetime than we have observed in the frequency response. This indicates the frequency responses of the LEDs may be limited by circuit effects ͑RC time constant͒ of the device mounting technique.…”

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confidence: 61%

GHz bandwidth GaAs light-emitting diodes

Chen

Hargis

Woodall

et al. 1999

Applied Physics Letters

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Double-heterostructure GaAs/GaAlAs light-emitting diodes ͑LEDs͒ have been fabricated with the emitter regions beryllium doped to 2ϫ10 19 and 7ϫ10 19 cm Ϫ3. The 7ϫ10 19 cm Ϫ3 doped emitters have an internal quantum efficiency of 10% and an optical modulation bandwidth of 1.7 GHz. The steady-state optical output power versus the input current shows an external efficiency of 2.5 W/mA. The 2ϫ10 19 cm Ϫ3 emitters have internal quantum efficiencies as high as 80%, but a reduced cutoff frequency. The external quantum efficiency reaches 10 W/mA. These high-speed LEDs are produced by reducing the radiative lifetime to 100-250 ps without significantly degrading internal quantum efficiency. The current results on heavily beryllium-doped LEDs exhibit, to the best of our knowledge, the highest external efficiencies to date for such high doping and efficiencies close to that observed for lower-doped LEDs.

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“…Therefore, the measured 3dB bandwidth of three different sizes LEDs were all improved significantly with the increased current density. This phenomenon can be demonstrated with the probability of bimolecular recombination, which was proportional to the injected carrier density into the active volume [9,10].…”

Section: Resultsmentioning

confidence: 99%

LED Modulation Characteristics in a Visible-Light Communication System

Pei¹,

Zhu²,

Yang³

et al. 2013

OPJ

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This paper conducts a research on modulation characteristics of blue light-emitting diodes (LEDs) used in a visible-light communication (VLC) system. Through analysis of the modulation characteristics of LEDs with different emitting sizes, we find that there is a similar linear relationship between LED's 3dB bandwidth and the operation current density. This experiment also shows that high series resistance is one major issue that limits our LED's modulation speed. To further improve the LED bandwidth, the resistance can be reduced by optimizing device layout as well as reducing material bulk resistance. Clearly, this study provides an approach to increase the modulation bandwidth of GaN-based LEDs for VLC systems.

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Design parameters of frequency response of GaAs—(Ga,Al)As double heterostructure LED's for optical communications

Cited by 87 publications

References 15 publications

Fast LEDs for polymer optical fiber communication at 650nm

Fast LEDs for polymer optical fiber communication at 650nm

GHz bandwidth GaAs light-emitting diodes

LED Modulation Characteristics in a Visible-Light Communication System

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