Design Optimization for High-Performance Self-Assembled Quantum Dot Lasers With Fabry–Perot Cavity

Theoretical analysis of relative intensity noise (RIN) characteristics of p-doped QD lasers has been presented. By considering dynamics of electrons and holes separately at GaAs barrier, wetting layer (WL), and three discrete QDs levels, twelve rate equations have been linearized in presence of Langevin noise sources. Calculations indicate that RIN level of QD laser reduces slightly through p-doping. Although providing excess holes to WL state decreases shot noise resulted from quantum confined levels and photon noise, the shot noise originated from three and two dimensional carrier densities, respectively inside the barrier and WL states, increases. It is shown that the RIN level declines in pdoped QD lasers by increasing the injection current which is in agreement with a recent experimental report. It is also demonstrated that the RIN level of QD lasers decreases by increasing the number of QD layers and shot noise plays the main role in this reduction.

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Design Optimization for High-Performance Self-Assembled Quantum Dot Lasers With Fabry–Perot Cavity

Cited by 4 publications

References 24 publications

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Synthesis, Characterization and Modelling of Colloidal Quantum Dots

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Theoretical Modeling of Relative Intensity Noise in p-Doped 1.3-μm InAs/GaAs Quantum Dot Lasers

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