Design Optimization and Fabrication of High-Sensitivity SOI Pressure Sensors with High Signal-to-Noise Ratios Based on Silicon Nanowire Piezoresistors

Zhang, Jiahong; Zhao, Yang; Ge, Yixian; Li, Min; Li, Yang; Mao, Xinyu

doi:10.3390/mi7100187

Cited by 35 publications

(35 citation statements)

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“…The sensitivity is a critical indicator of the piezoresistive pressure sensor. It relies on the initial zero-stress resistance R of the piezoresistors, which is determined by its size and doping concentration as well as temperature [ 26 , 29 , 30 ]. For a piezoresistor with area A R , the piezoresistive pressure sensitivity S is given by:

where Δ R represents the resistance change of the piezoresistor under the differential stress Δ P .…”

Section: Design Optimization Of the Array-type Piezoresistive Presmentioning

confidence: 99%

“…According to Equation (6), for investigating the relationship between the sensitivity and doping concentration as well as temperature, the dependence of the piezoresistive coefficient (π) as functions of the doping concentration ( n ) and temperature ( T ) is considered. The piezoresistive coefficient π( n , T ) of the silicon piezoresistor obeys to the following relation [ 26 , 29 ]:

…”

Section: Design Optimization Of the Array-type Piezoresistive Presmentioning

confidence: 99%

“…On the one hand, it is difficult to form an Ohmic contact when the doping concentration is low. On the other hand, the sensor noise and temperature drift increase with the doping concentration decreasing, thus affecting the overall SNR [ 26 , 29 ]. So, the doping concentration value has a preferred value, and the selection of the doping concentration should be comprehensively considered.…”

Section: Design Optimization Of the Array-type Piezoresistive Presmentioning

confidence: 99%

“…At the same time, accuracy of pressure sensor with each range can be improved through the average measurement. The high SNR is required for the faithful measurement of the small pressure differentials, and the different noise components commonly present with the piezoresistive-type sensors are carefully considered and modeled to improve the SNR [ 25 , 26 , 27 , 28 , 29 ]. It is noteworthy that the leakage current through the dielectric isolation instead of P-N isolation can be reduced and the operation temperature of the pressure sensor can be increased by using SOI material.…”

Section: Introductionmentioning

confidence: 99%

“…It is noteworthy that the leakage current through the dielectric isolation instead of P-N isolation can be reduced and the operation temperature of the pressure sensor can be increased by using SOI material. Meanwhile, the fabrication process for the SOI-based array-type piezoresistive pressure sensor is also compatible with CMOS-MEMS technology [ 29 ]. However, the performance of array-type MEMS piezoresistive pressure sensor is highly dependent on temperature variation primarily due to the change in the piezoresistive coefficient with temperature.…”

Section: Introductionmentioning

confidence: 99%

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Design, Fabrication, and Implementation of an Array-Type MEMS Piezoresistive Intelligent Pressure Sensor System

Zhang

Chen

et al. 2018

Micromachines

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To meet the radiosonde requirement of high sensitivity and linearity, this study designs and implements a monolithically integrated array-type piezoresistive intelligent pressure sensor system which is made up of two groups of four pressure sensors with the pressure range of 0–50 kPa and 0–100 kPa respectively. First, theoretical models and ANSYS (version 14.5, Canonsburg, PA, USA) finite element method (FEM) are adopted to optimize the parameters of array sensor structure. Combing with FEM stress distribution results, the size and material characteristics of the array-type sensor are determined according to the analysis of the sensitivity and the ratio of signal to noise (SNR). Based on the optimized parameters, the manufacture and packaging of array-type sensor chips are then realized by using the standard complementary metal-oxide-semiconductor (CMOS) and microelectromechanical system (MEMS) process. Furthermore, an intelligent acquisition and processing system for pressure and temperature signals is achieved. The S3C2440A microprocessor (Samsung, Seoul, Korea) is regarded as the core part which can be applied to collect and process data. In particular, digital signal storage, display and transmission are realized by the application of a graphical user interface (GUI) written in QT/E. Besides, for the sake of compensating the temperature drift and nonlinear error, the data fusion technique is proposed based on a wavelet neural network improved by genetic algorithm (GA-WNN) for average measuring signal. The GA-WNN model is implemented in hardware by using a S3C2440A microprocessor. Finally, the results of calibration and test experiments achieved with the temperature ranges from −20 to 20 °C show that: (1) the nonlinear error and the sensitivity of the array-type pressure sensor are 8330 × 10−4 and 0.052 mV/V/kPa in the range of 0–50 kPa, respectively; (2) the nonlinear error and the sensitivity are 8129 × 10−4 and 0.020 mV/V/kPa in the range of 50–100 kPa, respectively; (3) the overall error of the intelligent pressure sensor system is maintained at ±0.252% within the hybrid composite range (0–100 kPa). The involved results indicate that the developed array-type composite pressure sensor has good performance, which can provide a useful reference for the development of multi-range MEMS piezoresistive pressure sensor.

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where Δ R represents the resistance change of the piezoresistor under the differential stress Δ P .…”

Section: Design Optimization Of the Array-type Piezoresistive Presmentioning

confidence: 99%

…”

Section: Design Optimization Of the Array-type Piezoresistive Presmentioning

confidence: 99%

Section: Design Optimization Of the Array-type Piezoresistive Presmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Design, Fabrication, and Implementation of an Array-Type MEMS Piezoresistive Intelligent Pressure Sensor System

Zhang

Chen

et al. 2018

Micromachines

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Silicon Nanowires Driving Miniaturization of Microelectromechanical Systems Physical Sensors: A Review

et al. 2023

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The miniaturization of microelectromechanical systems (MEMS) physical sensors is driven by global connectivity needs and is closely linked to emerging digital technologies and the Internet of Things. Strong technical advantages of miniaturization such as improved sensitivity, functionality, and power consumption are accompanied by significant economic benefits due to semiconductor manufacturing. Hence, the trend to produce smaller sensors and their driving force resemble very much those of the miniaturization of integrated circuits (ICs) as described by Moore's law. In this respect, with its IC‐, and MEMS‐compatibility, and scalability, the silicon nanowire is frequently employed in frontier research as the sensor building block replacing conventional sensors. The integration of the silicon nanowire with MEMS has thus generated a multiscale hybrid architecture, where the silicon nanowire serves as the piezoresistive transducer and MEMS provide an interface with external forces, such as inertial or magnetic. This approach has been reported for almost all physical sensor types over the last decade. These sensors are reviewed here with detailed classification. In each case, associated technological challenges and comparisons with conventional counterparts are provided. Future directions and opportunities are highlighted.

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Layered PtSe₂ for Sensing, Photonic, and (Opto‐)Electronic Applications

Wang

McEvoy

et al. 2020

Advanced Materials

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An increasing enthusiasm for research into 2D nanostructures is driven by their exceptional mechanical, chemical, optical, and physical properties that arise from their atomically thin dimension. These properties make 2D nanostructures promising candidates for applications in the next generation of photonic, valleytronic, and (opto-)electronic devices. 2D black phosphorus, for instance, is a novel 2D material with a thickness-tunable bandgap and outstanding properties that have attracted tremendous interest. However, its commercial and industrial applications have been greatly hindered by its poor environmental stability. [1] Layered transition metal dichalcogenides (TMDs), such as MoS 2 , WS 2 , and MoSe 2 , have been experimentally demonstrated to possess thickness-dependent bandgaps and many other promising physical, chemical, and mechanical properties. However, the majority of these TMDs suffer from relatively low charge-carrier mobilities, rather large Schottky barriers when contacted with metals, complicated fabrication processes and a narrow spectral response mainly in the visible region. [2,3] As a result, even though the first report on the experimental isolation of graphene was 16 years ago, [4] and researchers worldwide have spent massive time and effort investigating 2D materials, thus far few have been effectively employed in industrial and commercial applications. Recently, layered PtSe 2 , a Group-10 TMD, has been demonstrated to be one of the most promising 2D materials for adoption by industries due to its unprecedented photonic, physical, and chemical properties along with lowtemperature synthesis methods, high charge-carrier mobilities and long-term air stability. [5-11] One of the important industrial advantages of PtSe 2 is the developed synthesis methods, some of which are compatible with modern silicon technologies. The studied methods to synthesize layered PtSe 2 include molecular-beam epitaxy (MBE), [7,12] chemical vapor deposition (CVD), [8,13] thermally assisted conversion (TAC), [14-20] chemical vapor transport (CVT), [5] plasma-assisted selenization (PAS), [21] microwave assisted synthesis (MAS), [22] mechanical exfoliation (ME), [13,23] the wet chemical (WC) method, [24,20] and so on. Both MBE and CVD are typically carried out at high temperature and can result in high-quality PtSe 2 monolayers. In contrast, wafer-scale and thickness-tunable layered PtSe 2 can be obtained using TAC Since the first experimental discovery of graphene 16 years ago, many other 2D layered nanomaterials have been reported. However, the majority of 2D nanostructures suffer from relatively complicated fabrication processes that have bottlenecked their development and their uptake by industry for practical applications. Here, the recent progress in sensing, photonic, and (opto-)electronic applications of PtSe 2 , a 2D layered material that is likely to be used in industries benefiting from its high air-stability and semiconductor-technology-compatible fabrication methods, is reviewed. The advantages and disad...

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Design Optimization and Fabrication of High-Sensitivity SOI Pressure Sensors with High Signal-to-Noise Ratios Based on Silicon Nanowire Piezoresistors

Cited by 35 publications

References 39 publications

Design, Fabrication, and Implementation of an Array-Type MEMS Piezoresistive Intelligent Pressure Sensor System

Design, Fabrication, and Implementation of an Array-Type MEMS Piezoresistive Intelligent Pressure Sensor System

Silicon Nanowires Driving Miniaturization of Microelectromechanical Systems Physical Sensors: A Review

Layered PtSe₂ for Sensing, Photonic, and (Opto‐)Electronic Applications

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Design Optimization and Fabrication of High-Sensitivity SOI Pressure Sensors with High Signal-to-Noise Ratios Based on Silicon Nanowire Piezoresistors

Cited by 35 publications

References 39 publications

Design, Fabrication, and Implementation of an Array-Type MEMS Piezoresistive Intelligent Pressure Sensor System

Design, Fabrication, and Implementation of an Array-Type MEMS Piezoresistive Intelligent Pressure Sensor System

Silicon Nanowires Driving Miniaturization of Microelectromechanical Systems Physical Sensors: A Review

Layered PtSe2 for Sensing, Photonic, and (Opto‐)Electronic Applications

Contact Info

Product

Resources

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Layered PtSe₂ for Sensing, Photonic, and (Opto‐)Electronic Applications