Design, Operation and BER Test of Multi-Gb/s Radiation-Hard Drivers in 65 nm Technology for Silicon Photonics Optical Modulators

Ciarpi, Gabriele; Cammarata, Simone; Faralli, S.; Velha, Philippe; Magazzù, G.; Palla, F.; Saponara, Sergio

doi:10.1007/978-3-030-37277-4_2

Cited by 1 publication

(4 citation statements)

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“…In [17], we already stated that the unexpected results recorded in the MZM case were packaging-dependent, even because error-free transmissions till 5 Gb/s were verified from fully electrical measurements made on a standalone driver installed on a testing PCB. As can be seen from the detail in Figure 9, a few bond wires indeed traversed the whole chip and potentially induced undesired couplings between the EIC input/output ports.…”

Section: Resultsmentioning

confidence: 98%

“…As already shown in [44], it is important to note that the proposed driver architecture could sustain a 5 Gb/s transmission to these extreme radiation levels, though undergoing a reduction in the output voltage swing. The voltage amplitude versus TID trend appeared to be slightly smooth, and only a 30% decrease was captured at 8 MGy TID [17]. Even though transistor parameters would continue to degrade, it was likely that the driver could operate at even higher doses.…”

Section: Resultsmentioning

confidence: 98%

“…In this work, we will show that small architectural changes to conventional CMOS drivers for SiPh devices can enable multi-Gb/s transmission on both lumped-element Mach-Zehnder modulators (MZMs) and ring modulators (RMs), at least for relatively low bandwidths compared to datacom frameworks, but still of interest for HEP applications. This paper extends the contribution in [17] in terms of conceptual modeling and experimental results, evaluating the operation of a full-custom CMOS driver with different classes of SiPh modulators.…”

Section: Introductionmentioning

confidence: 81%

“…Proper operation of the standalone driver was observed till a total ionizing dose (TID) of 8 MGy, which was the highest dose level reached during the test because of limited testing time. A 30% voltage amplitude degradation with respect to the pre-irradiation value was observed [17]. In addition, a single event upset (SEU) analysis of the same circuit was carried out in [44], proving its HEP-level radiation-tolerance.…”

Section: Samplesmentioning

confidence: 91%

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Design and Performance Evaluation of Multi-Gb/s Silicon Photonics Transmitters for High Energy Physics

et al. 2020

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Optical links are rapidly becoming pervasive in the readout chains of particle physics detector systems. Silicon photonics (SiPh) stands as an attractive candidate to sustain the radiation levels foreseen in the next-generation experiments, while guaranteeing, at the same time, multi-Gb/s and energy-efficient data transmission. Integrated electronic drivers are needed to enable SiPh modulators’ deployment in compact on-detector front-end modules. A current-mode logic-based driver harnessing a pseudo-differential output stage is proposed in this work to drive different types of SiPh devices by means of the same circuit topology. The proposed driver, realized in a 65 nm bulk technology and already tested to behave properly up to an 8 MGy total ionizing dose, is hybridly integrated in this work with a lumped-element Mach–Zehnder modulator (MZM) and a ring modulator (RM), both fabricated in a 130 nm silicon-on-insulator (SOI) process. Bit-error-rate (BER) performances confirm the applicability of the selected architecture to either differential and single-ended loads. A 5 Gb/s data rate, in line with the current high energy physics requirements, is achieved in the RM case, while a packaging-related performance degradation is captured in the MZM-based system, confirming the importance of interconnection modeling.

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Section: Resultsmentioning

confidence: 98%

Section: Resultsmentioning

confidence: 98%

Section: Introductionmentioning

confidence: 81%

Section: Samplesmentioning

confidence: 91%

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