Design of X-Band Mmic Low-Noise Amplifier in Gaas-Based 0.5 Um Phemt Technology

Abstract

One of the most important functional units of the receiving tract as part of the transceivers is a Low-Noise Amplifier (LNA). This paper presents the design process of a X-band (8…12 GHz) Microwave Monolithic Integrated Circuit (MMIC) LNA. The design was carried out using the Process Design Kit of the GaAs-based pHEMT05D technological process of JSC «Svetlana-Rost». The active nonlinear elements in this technological process are depletion mode pseudomorphic high electron mobility transistors with a 0,5-microns gate length.