Design Of Reliable High Voltage Avalanche Transistor Pulsers

Fulkerson, E.S.; Booth, R.

doi:10.1109/modsym.1994.597053

Cited by 9 publications

(9 citation statements)

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“…These designs are limited to >2 ns rise times because of inherent limitations in the diode switching characteristics. Avalanche transistors, with nonlinear high gain characteristics, have been known to switch in the 100s of picosecond regime, and were therefore chosen to be suitable for our design goals [5,6]. Like in [5], we chose SOT-23 Zetex FMMT417 avalanche transistors because of their high VCBO rating (320 V) and compact low inductance packaging.…”

Section: Designmentioning

confidence: 99%

“…Avalanche transistors, with nonlinear high gain characteristics, have been known to switch in the 100s of picosecond regime, and were therefore chosen to be suitable for our design goals [5,6]. Like in [5], we chose SOT-23 Zetex FMMT417 avalanche transistors because of their high VCBO rating (320 V) and compact low inductance packaging. Further, these transistors have a peak collector current rating of 60 A for pulses shorter than 20 ns and are therefore more than well suited to our peak current requirement of 25 A.…”

Section: Designmentioning

confidence: 99%

“…The basic circuit is a series chain of avalanche transistors and capacitors configured as a tapered transmission line from high voltage to ground [5]. The circuit diagram is shown in Figure 1.…”

Section: Trigger Circuitmentioning

confidence: 99%

“…Modeling the Zetex transistor as having an inherent inductance of L = 2 nH [5], and using the formula Z = √(L/C), C 1 = 120 pF gives a first stage impedance of 4 Ω.…”

Section: Tapered Transmission Line Configurationmentioning

confidence: 99%

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Compact Subnanosecond Pulse Generator Using Avalanche Transistors for Cell Electroperturbation Studies

Krishnaswamy

Kuthi

Vernier

et al. 2007

IEEE Trans. Dielect. Electr. Insul.

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Research on the electroperturbation effects of ultrashort high field pulses in cancer cells requires subnanosecond rise time, high voltage pulses delivered to low impedance biological loads. Here we present a compact solid-state pulse generator developed for this application. The pulse is generated by switching a chain of avalanche transistors configured as a tapered transmission line from high voltage to ground. The system features a built in 1400:1 capacitively compensated resistive voltage divider. The divider, with a 3 dB point at 910 MHz, overcomes challenges in the direct measurement of the high frequency components of the output pulse. The generator is capable of producing a 0.8 ns rise time, 1.3 ns wide, 1.1 kV pulse into a 50 Ω load at a maximum repetition rate of 200 kHz. Techniques to implement physical layouting strategies to achieve subnanosecond rise times are outlined. Problems faced in integrating the subnanosecond pulse generator with a biological load are discussed. This pulse generator will be used in experiments aimed at electromanipulation of intracellular biomolecular structures.

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Section: Designmentioning

confidence: 99%

Section: Designmentioning

confidence: 99%

Section: Trigger Circuitmentioning

confidence: 99%

“…Modeling the Zetex transistor as having an inherent inductance of L = 2 nH [5], and using the formula Z = √(L/C), C 1 = 120 pF gives a first stage impedance of 4 Ω.…”

Section: Tapered Transmission Line Configurationmentioning

confidence: 99%

See 2 more Smart Citations

Compact Subnanosecond Pulse Generator Using Avalanche Transistors for Cell Electroperturbation Studies

Krishnaswamy

Kuthi

Vernier

et al. 2007

IEEE Trans. Dielect. Electr. Insul.

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“…Each switch has its advantages and applications. The avalanche transistor mode is ideally suitable for this operation and has wide applications in laser Q-switching (Chadderton, 1996;E. S. Fulkerson & R. Box;C.…”

Section: Introductionmentioning

confidence: 99%

Nanoseconds Switching for High Voltage Circuit using Avalanche Transistors

Tamuri¹,

Bidin²,

Daud³

2009

APR

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The avalanche transistor is suitable for switching high voltage in kilovolts region. In this paper, a simple switching circuit consists of avalanche transistor is demonstrated. Sixteen of ZTX 415 avalanche transistors were used to switch a high voltage circuit up to 4.5 kV. A PIC16F84 microcontroller was utilized as control unit to generate input trigger. The result shows that the developed circuit was able to switch applied voltage up-to 4.5 kV with an average falling time is 2.89 ns.

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